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GA200SA60UP, GA200TD120K, GA200TD120U

GA200SA60UP, GA200TD120K, GA200TD120U Selling Leads, Datasheet

MFG:IR  Package Cooled:200A/600V/IGBT/2U  D/C:2008+

GA200SA60UP, GA200TD120K, GA200TD120U Picture

GA200SA60UP, GA200TD120K, GA200TD120U Datasheet download

Five Points

Part Number: GA200SA60UP

 

MFG: IR

Package Cooled: 200A/600V/IGBT/2U

D/C: 2008+

 

 

 
 
 
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GA200SA60UP Suppliers

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About GA200

PDF/DataSheet Download

Datasheet: GA200

File Size: 143521 KB

Manufacturer: MICROSEMI [Microsemi Corporation]

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GA200TD120K Suppliers

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About GA200

PDF/DataSheet Download

Datasheet: GA200

File Size: 143521 KB

Manufacturer: MICROSEMI [Microsemi Corporation]

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GA200TD120U Suppliers

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About GA200TD120U

PDF/DataSheet Download

Datasheet: GA200TD120U

File Size: 306853 KB

Manufacturer: IRF [International Rectifier]

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GA200TD120U Maximum Ratings

  Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
IC @ TC=25°C Continuous Collector Current 200 A
ICM Pulsed Collector Current 400
ILM Peak Switching Current‚ 400
IFM Peak Diode Forward Current 400
VGE Gate-to-Emitter Voltage ±20 V
VISOL RMS Isolation Voltage, Any Terminal To 2500
PD @ TC=25°C Maximum Power Dissipation 1040 W
PD @ TC=85°C Maximum Power Dissipation 540
TJ Operating Junction Temperature Range -40 to +150 °C
TSTG Storage Temperature Range -40 to +125

GA200TD120U Features

• Generation 4 IGBT technology
• UltraFast:  Optimized for high operating  frequencies 8-40 kHz in hard switching, >200  kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED antiparallel diodes with ultra- soft  recovery
• Industry standard package
• UL approved

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