GT30J311, GT30J322, GT30J324 Selling Leads, Datasheet
MFG:TOSHIBA Package Cooled:TO-3PL D/C:08+
GT30J311, GT30J322, GT30J324 Datasheet download
Part Number: GT30J311
MFG: TOSHIBA
Package Cooled: TO-3PL
D/C: 08+
GT30J311, GT30J322, GT30J324
- Table of contents:
Info of GT30J311
Info of GT30J322
Info of GT30J324
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About GT30J311
PDF/DataSheet Download
Datasheet: GT30J311
File Size: 335900 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About GT30J322
PDF/DataSheet Download
Datasheet: GT30J322
File Size: 263257 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About GT30J324
PDF/DataSheet Download
Datasheet: GT30J324
File Size: 170331 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
GT30J324 Maximum Ratings
|
Characteristics |
Symbol |
Rating |
Unit | |
| Collector-emitter voltage |
VCES |
600 |
V | |
| Gate-emitter voltage |
VEBS |
±20 |
V | |
| Collector current |
DC |
IC |
30 |
A |
|
1 ms |
ICP |
60 | ||
| Emitter-collector forward current |
DC |
IF |
30 |
A |
|
1 ms |
IFP |
60 | ||
| Collector power dissipation (Tc = 25) |
PC |
170 |
W | |
| Junction temperature |
Tj |
150 |
||
| Storage temperature range |
Tstg |
-55 to 150 |
||
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
GT30J324 Features
• Fourth-generation IGBT
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference)High speed: tf = 0.05 s (typ.)Low switching loss : Eon = 1.00 mJ (typ.): Eoff = 0.80 mJ (typ.)
• Low saturation voltage: VCE (sat) = 2.0 V (typ.)
• FRD included between emitter and collector
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference)High speed: tf = 0.05 s (typ.)Low switching loss : Eon = 1.00 mJ (typ.): Eoff = 0.80 mJ (typ.)
• Low saturation voltage: VCE (sat) = 2.0 V (typ.)
• FRD included between emitter and collector
GT30J324 Connection Diagram
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