GT60J301, GT60J321, GT60J323 Selling Leads, Datasheet
MFG:500 Package Cooled:TOS D/C:N/A
GT60J301, GT60J321, GT60J323 Datasheet download
Part Number: GT60J301
MFG: 500
Package Cooled: TOS
D/C: N/A
MFG:500 Package Cooled:TOS D/C:N/A
GT60J301, GT60J321, GT60J323 Datasheet download
MFG: 500
Package Cooled: TOS
D/C: N/A
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PDF/DataSheet Download
Datasheet: GT605
File Size: 73488 KB
Manufacturer: TSC [Taiwan Semiconductor Company, Ltd]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: GT60J321
File Size: 188247 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: GT605
File Size: 73488 KB
Manufacturer: TSC [Taiwan Semiconductor Company, Ltd]
Download : Click here to Download
Characteristics | Symbol | Rating | Unit | |
Collector-emitter voltage | VCES |
600 | V | |
Gate-emitter voltage | V GES | 25 | V | |
Collector current | DC | IC | 60 | A |
1ms | ICP | 120 | ||
Emitter- current |
DC | IECF | 60 | A |
1ms | IECPF | 120 | ||
Collector power dissipation (Tc =25!aC |
PC | 200 | W | |
Junction temperature | Tj | 150 | oC | |
Storage temperature range | Tstg | -55 -150 | oC | |
Screw torque | - | 0.8 | N m |
Characteristics |
Symbol |
Rating |
Unit | |
Collector-emitter voltage |
VCES |
600 |
V | |
Gate-emitter voltage |
VEBS |
±25 |
V | |
Collector current |
@ Tc = 100 |
IC |
33 |
A |
@ Tc = 25 |
ICP |
60 | ||
Pulsed collector current |
ICP |
120 |
A | |
Diode forward current |
DC |
IF |
30 |
A |
1 ms |
IFP |
120 | ||
Collector power dissipation |
@ Tc = 100 |
PC |
68 |
W |
@ Tc = 25 |
170 | |||
Junction temperature |
Tj |
150 |
||
Storage temperature range |
Tstg |
-55 to 150 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
• Enhancement mode type
• High speed : tf = 0.16 s (typ.) (IC = 60A)
• Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)
• FRD included between emitter and collector
• Fourth generation IGBT
• TO-3P(LH) (Toshiba package name)