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GT60J301, GT60J321, GT60J323

GT60J301, GT60J321, GT60J323 Selling Leads, Datasheet

MFG:500  Package Cooled:TOS  D/C:N/A

GT60J301, GT60J321, GT60J323 Picture

GT60J301, GT60J321, GT60J323 Datasheet download

Five Points

Part Number: GT60J301

 

MFG: 500

Package Cooled: TOS

D/C: N/A

 

 

 
 
 
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GT60J301 Suppliers

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  • GT60M101

  • Vendor: Toshiba Qty: 200 Note: 0  Adddate: 2024-04-29
  • Inquire Now
  •   China
    Contact: Mr.cai   MSN:syfdz13@hotmail.com
    Tel: 86-755-82529667
    Fax: 86-755-61685117
    (17)

About GT605

PDF/DataSheet Download

Datasheet: GT605

File Size: 73488 KB

Manufacturer: TSC [Taiwan Semiconductor Company, Ltd]

Download : Click here to Download

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GT60J321 Suppliers

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  • GT60M101

  • Vendor: Toshiba Qty: 200 Note: 0  Adddate: 2024-04-29
  • Inquire Now
  •   China
    Contact: Mr.cai   MSN:syfdz13@hotmail.com
    Tel: 86-755-82529667
    Fax: 86-755-61685117
    (17)

About GT60J321

PDF/DataSheet Download

Datasheet: GT60J321

File Size: 188247 KB

Manufacturer: TOSHIBA [Toshiba Semiconductor]

Download : Click here to Download

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GT60J323 Suppliers

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  • GT60M101

  • Vendor: Toshiba Qty: 200 Note: 0  Adddate: 2024-04-29
  • Inquire Now
  •   China
    Contact: Mr.cai   MSN:syfdz13@hotmail.com
    Tel: 86-755-82529667
    Fax: 86-755-61685117
    (17)

About GT605

PDF/DataSheet Download

Datasheet: GT605

File Size: 73488 KB

Manufacturer: TSC [Taiwan Semiconductor Company, Ltd]

Download : Click here to Download

Related PDF Download

Related Part Number

GT60J321 Maximum Ratings

Characteristics Symbol Rating Unit
Collector-emitter voltage VCES
600 V
Gate-emitter voltage V GES 25 V
Collector current DC IC 60 A
1ms ICP 120
Emitter-
current
DC IECF 60 A
1ms IECPF 120
Collector power dissipation
(Tc =25!aC
PC 200 W
Junction temperature Tj 150 oC
Storage temperature range Tstg -55 -150 oC
Screw torque - 0.8 N m

GT60J323 Maximum Ratings

Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
600
V
Gate-emitter voltage
VEBS
±25
V
Collector current
@ Tc = 100
IC
33
A
@ Tc = 25
ICP
60
Pulsed collector current  

ICP

120
A
Diode forward current
DC
IF
30
A
1 ms
IFP
120
Collector power
dissipation
@ Tc = 100
PC
68
W
@ Tc = 25
170
Junction temperature
Tj
150
Storage temperature range
Tstg
-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

GT60J323 Features

• Enhancement mode type
• High speed : tf = 0.16 s (typ.) (I
C = 60A)
• Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)
• FRD included between emitter and collector
• Fourth generation IGBT
• TO-3P(LH) (Toshiba package name)

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