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GT60N322
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DataSheet
General Description
GT60N322 Maximum Ratings
| Characteristics | Symbol | Rating | Unit | |
| Collector-emitter voltage | VCES | 1000 | V | |
| Gate-emitter voltage | VGES | ±25 | V | |
| Continuous collector current |
@Tc = 100°C | IC | 29 | A |
| @Tc = 25°C | 57 | |||
| Pulsed collector current (Note 1) | ICP | 120 | A | |
| Collector power dissipation |
@Tc = 100°C | PC | 80 | W |
| @Tc = 25°C | 200 | |||
| Diode forward current | DC | IF | 15 | A |
| Pulsed | IFP | 120 | A | |
| Junction temperature | Tj | 150 | ||
| Storage temperature | Tstg | -55~150 | ||
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the ignificant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
GT60N322 Features
• Enhancement mode type
• High speed : tf = 0.11 s (typ.) (IC = 60 A)
• Low saturation voltage : VCE (sat) = 2.4 V (typ.) (IC = 60 A)
• FRD included between emitter and collector
• TO-3P(LH) (Toshiba package name)
• High speed : tf = 0.11 s (typ.) (IC = 60 A)
• Low saturation voltage : VCE (sat) = 2.4 V (typ.) (IC = 60 A)
• FRD included between emitter and collector
• TO-3P(LH) (Toshiba package name)
GT605
PDF/DataSheet Download
- Datasheet: GT605
- File Size: 73488 KB
- Manufacturer: TSC [Taiwan Semiconductor Company, Ltd]
- Click here to Download
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