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GT60N322

Features: • Enhancement mode type• High speed : tf = 0.11 s (typ.) (IC = 60 A)• Low saturation voltage : VCE (sat) = 2.4 V (typ.) (IC = 60 A)• FRD included between emitter and collector• TO-3P(LH) (Toshiba package name)Specifications Characteristics Symbol Rati...

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GT60N322: Features: • Enhancement mode type• High speed : tf = 0.11 s (typ.) (IC = 60 A)• Low saturation voltage : VCE (sat) = 2.4 V (typ.) (IC = 60 A)• FRD included between emitter an...

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Part Number:
GT60N322
Supply Ability:
5000

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Product Details

Description



Features:

• Enhancement mode type
• High speed : tf = 0.11 s (typ.) (IC = 60 A)
• Low saturation voltage : VCE (sat) = 2.4 V (typ.) (IC = 60 A)
• FRD included between emitter and collector
• TO-3P(LH) (Toshiba package name)


Specifications

Characteristics Symbol Rating Unit
Collector-emitter voltage VCES 1000 V
Gate-emitter voltage VGES ±25 V
Continuous collector
current		 @Tc = 100°C IC 29 A
@Tc = 25°C 57
Pulsed collector current (Note 1) ICP 120 A
Collector power
dissipation		 @Tc = 100°C PC 80 W
@Tc = 25°C 200
Diode forward current DC IF 15 A
Pulsed IFP 120 A
Junction temperature Tj 150
Storage temperature Tstg -55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the ignificant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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