Purchase GT60M323, In-stock GT60M323 From SeekIC.
MFG:N/A Package Cooled:NA/ D/C:09+
- Table of contents:
GT60M323
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Suppliers
DataSheet
General Description
GT60M323 Maximum Ratings
| Parameter | Symbol | Rating | Unit | |
| Collector-emitter voltage | VCES | 900 | V | |
| Gate-emitter voltage | VGES | ±25 | V | |
| @ Tc = 100 | IC | 31 | A | |
| @ Tc = 25 | 60 | |||
| Pulsed collector current | ICP | 120 | V | |
| Diode forward current | DC | IF | 15 | A |
| Pulse | IFP | 120 | A | |
| Collector power dissipation |
@ Tc = 100 | PC | 80 | W |
| @ Tc = 25 |
200 | |||
| Junction Temperature | Tj | 150 | ||
| Storage Temperature Range | Tstg | −55 to 150 | ||
GT60M323 Features
• Enhancement mode type
• High speed : tf = 0.09 s (typ.) (IC = 60 A)
• Low saturation voltage : VCE (sat) = 2.3 V (typ.) (IC = 60 A)
• FRD included between emitter and collector
• TO-3P(LH) (Toshiba package name)
• High speed : tf = 0.09 s (typ.) (IC = 60 A)
• Low saturation voltage : VCE (sat) = 2.3 V (typ.) (IC = 60 A)
• FRD included between emitter and collector
• TO-3P(LH) (Toshiba package name)
GT60M323
PDF/DataSheet Download
- Datasheet: GT60M323
- File Size: 197671 KB
- Manufacturer: TOSHIBA [Toshiba Semiconductor]
- Click here to Download
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