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GT60M323

Features: • Enhancement mode type• High speed : tf = 0.09 s (typ.) (IC = 60 A)• Low saturation voltage : VCE (sat) = 2.3 V (typ.) (IC = 60 A)• FRD included between emitter and collector• TO-3P(LH) (Toshiba package name)Specifications Parameter Symbol Rating Un...

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SeekIC No. : 004357058 Detail

GT60M323: Features: • Enhancement mode type• High speed : tf = 0.09 s (typ.) (IC = 60 A)• Low saturation voltage : VCE (sat) = 2.3 V (typ.) (IC = 60 A)• FRD included between emitter an...

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Part Number:
GT60M323
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Enhancement mode type
• High speed : tf = 0.09 s (typ.) (IC = 60 A)
• Low saturation voltage : VCE (sat) = 2.3 V (typ.) (IC = 60 A)
• FRD included between emitter and collector
• TO-3P(LH) (Toshiba package name)


Specifications

Parameter Symbol Rating Unit
Collector-emitter voltage VCES 900 V
Gate-emitter voltage VGES ±25 V
  @ Tc = 100 IC 31 A
@ Tc = 25 60
Pulsed collector current ICP 120 V
Diode forward current DC IF 15 A
Pulse IFP 120 A
Collector power
dissipation		 @ Tc = 100 PC 80 W
@ Tc = 25

200

Junction Temperature Tj 150
Storage Temperature Range Tstg −55 to 150



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