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IPW50R140CP, IPW50R199CP, IPW60R045CP

Table of contents:
Info of IPW50R140CP
Info of IPW50R199CP
Info of IPW60R045CP

IPW50R140CP, IPW50R199CP, IPW60R045CP Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:08+09

IPW50R140CP, IPW50R199CP, IPW60R045CP Datasheet download

Five Points

Part Number: IPW60R045CP

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: TO-247

D/C: 08+09

Description: MOSFET N-CH 650V 60A TO-247

Price Break

240

Unit Price

3.86675

Extended Price

928.02

(All prices are in USD) Prices for reference only

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IPW50R140CP Parameters

Technical/Catalog Information	IPW50R140CP
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	550V
Current - Continuous Drain (Id) @ 25° C	23A
Rds On (Max) @ Id, Vgs	140 mOhm @ 14A, 10V
Input Capacitance (Ciss) @ Vds	2540pF @ 100V
Power - Max	192W
Packaging	Tube
Gate Charge (Qg) @ Vgs	64nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPW50R140CP IPW50R140CP

IPW50R140CP Maximum Ratings

Maximum ratings, at T _j=25 , unless otherwise specified

Parameter	Symbol	Conditions	Value	Unit
Continuous drain current	I_D	T_C=25	23	A
Continuous drain current	I_D	T_C=100	15
Pulsed drain current²⁾	I_D,pulse	T_C=25	56
Avalanche energy, single pulse	E_AS	I_D=9.3 A, V_DD=50 V	616	mJ
Avalanche energy, repetitive t_AR^2),3)	E_AR	I_D=9.3 A, V_DD=50 V	0.93
Avalanche current, repetitive t_AR^2),3)	I_AR		9.3	A
MOSFET dv /dt ruggedness	dv /dt	V_DS=0...400 V	50	V/ns
Gate source voltage	V_GS	static	±20	V
Gate source voltage	V_GS	AC (f >1 Hz)	±30	V
Power dissipation	P_tot	T_C=25	192	W
Operating and storage temperature	T_j, T_stg		-55 ... 150
Mounting torque		M3 and M3.5 screws	60	Ncm

IPW50R140CP Features

• Worldwide best R _{DS ,on} in TO220
• Lowest figure of merit R_ON x Q_g• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant
• Quailfied according to JEDEC1) for target applications CoolMOS CP is designed for:
• Hard & soft switching SMPS topologies
• CCM PFC for ATX, Notebookadapter & PDP and LCD TV
• PWM for ATX, Notebook adapter, PDP and LCD TV

IPW50R199CP Parameters

Technical/Catalog Information	IPW50R199CP
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	550V
Current - Continuous Drain (Id) @ 25° C	17A
Rds On (Max) @ Id, Vgs	199 mOhm @ 9.9A, 10V
Input Capacitance (Ciss) @ Vds	1800pF @ 100V
Power - Max	139W
Packaging	Tube
Gate Charge (Qg) @ Vgs	45nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPW50R199CP IPW50R199CP

IPW60R045CP Parameters

Technical/Catalog Information	IPW60R045CP
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	60A
Rds On (Max) @ Id, Vgs	45 mOhm @ 44A, 10V
Input Capacitance (Ciss) @ Vds	6800pF @ 100V
Power - Max	431W
Packaging	Tube
Gate Charge (Qg) @ Vgs	190nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IPW60R045CP IPW60R045CP IPW60R045CPIN ND IPW60R045CPINND IPW60R045CPIN

IPW60R045CP Maximum Ratings

Parameter	Symbol	Conditions	Value	Unit
Continuous drain current	I_D	T_C=25	60	A
Continuous drain current	I_D	T_C=100	38
Pulsed drain current²⁾	I_D,pulse	T_C=251)	230
Avalanche energy, single pulse	E_AS	I_D=11A,V_DD=50V	1950	mJ
Avalanche energy, repetitive t_AR ^2),3)	E_AR	I_D=11A,V_DD=50V	3
Avalanche current, repetitive t_AR ^2),3)	I_AR		11	A
MOSFET dv /dt ruggedness	dv /dt	V_DS=0...480 V	50	V/s
Gate source voltage	V_GS	static	±20	V
Gate source voltage	V_GS	AC (f >1 Hz)	±30	V
Power dissipation	P_tot	T_C=25	431	W
Operating and storage temperature	T_j, T_stg		-55 ... 150
Mounting torque		M3 and M3.5 screws	60	Ncm

IPW60R045CP Features

• Worldwide best R_ds,on in TO247
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC¹⁾ for target applications
• Pb-free lead plating; RoHS compliant

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