MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:08+09
IPW60R190C6, IPW90R120C3, IPW90R1K0C3 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: TO-247
D/C: 08+09
Description: MOSFET N-CH 900V 5.7A TO-247
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| Technical/Catalog Information | IPW90R120C3 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25° C | 36A |
| Rds On (Max) @ Id, Vgs | 120 mOhm @ 26A, 10V |
| Input Capacitance (Ciss) @ Vds | 6800pF @ 100V |
| Power - Max | 417W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 270nC @ 10V |
| Package / Case | TO-247 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPW90R120C3 IPW90R120C3 |
| Technical/Catalog Information | IPW90R1K0C3 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25° C | 5.7A |
| Rds On (Max) @ Id, Vgs | 1 Ohm @ 3.3A, 10V |
| Input Capacitance (Ciss) @ Vds | 850pF @ 100V |
| Power - Max | 89W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 34nC @ 10V |
| Package / Case | TO-247 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPW90R1K0C3 IPW90R1K0C3 |
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