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The IRL3803LPbF is designed as HEXFET power MOSFET.It would provide the designers with an extremely efficient and reliable device for use in a wide variety of applications. It has eight features.The first one is that it would have ligic-level gate drive.The second one is that it would use the advanced process technology.The next one is that it would have surface mount.The next one is that it would have 175°C operating temperature.The next one is that it would hae fast switching.The next one is that it would be fully avalanche raletd.The last one is that it would be lead free.That are all the features. Some absolute maximum ratings have been concluded into several points as follow.The first one is about its continuous drain current @Tc=25°C which would be 140A.The second one is about its continuous drain current @Tc=100°C which would be 98A.The next one is about its pulse drain current which would be 470A. The next one is about its power dissipation which would be 200W @Tc=25°C.The next one is about its linear derating factor which would be 1.3W/°C.The next one is about its gate to source voltage which would be +/- 16V.The next one is about its single pulse avalanche energy which would be 610mJ.The next one is about its avalanche current which would be 71A.The next one is about its repititive avalanche energy which would be 20mJ.The next one is about its peak diode recovery dv/dt which would be 5.0V/ns.The next one is about its operating junction and storage temperature range which would be from -55 to +175°C.The last one is solering temperature, for 10 seconds which would be 300°C.And so on. Also there are some electrical characteristics @ Tj=25°C unless otherwise specified about it.The first one is about its drain to source breakdown voltage which would be min 30V with condition of Vgs=0V, Id=250uA. The second one is about its breakdown voltage temp. coefficient which would be typ 0.052V/°C.The next one is about its gate threshold voltage which would be min 1.0V with condition of Vds=Vgs, Id=250uA.And so on.For more information please contact us.
IRL3803LPBF Maximum Ratings
IRL3803LPBF Features
IRL3803VSPBF Parameters
Technical/Catalog Information
IRL3803VSPBF
Vendor
International Rectifier
Category
Discrete Semiconductor Products
Mounting Type
Surface Mount
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25° C
140A
Rds On (Max) @ Id, Vgs
5.5 mOhm @ 71A, 10V
Input Capacitance (Ciss) @ Vds
3720pF @ 25V
Power - Max
3.8W
Packaging
Tube
Gate Charge (Qg) @ Vgs
76nC @ 4.5V
Package / Case
D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature
Logic Level Gate
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
IRL3803VSPBF IRL3803VSPBF
IRL3803VSPBF General Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connectionresistance and can dissipate up to 2.0W in a typical surface mount application.
IRL3803VSPBF Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25
Continuous Drain Current,VGS @ 10V
140
A
ID @ TC = 100
Continuous Drain Current,VGS @ 10V
110
IDM
Pulsed Drain Current
470
PD @ TC = 25
Power Dissipation
3.8
W
PD @ TC = 25
Power Dissipation
200
Linear Derating Factor
1.4
W/
VGS
Gate-to-Source Voltage
±16
V
IAR
Avalanche Current
71
A
EAR
Repetitive Avalanche Energy
20
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
IRL3803VSPBF Features
` Logic-Level Gate Drive ` Advanced Process Technology ` Surface Mount (IRL3803VS) ` Low-profile through-hole (IRL3803VL) ` 175 Operating Temperature ` Fast Switching ` Fully Avalanche Rated ` Lead-Free