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IXFH9N80Q, IXFHN100, IXFHT24N50

Table of contents:
Info of IXFH9N80Q
Info of IXFHN100
Info of IXFHT24N50

IXFH9N80Q, IXFHN100, IXFHT24N50 Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:IXYS D/C:07+

IXFH9N80Q, IXFHN100, IXFHT24N50 Datasheet download

Five Points

Part Number: IXFH9N80Q

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: IXYS

D/C: 07+

Description: MOSFET N-CH 800V 9A TO-247

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IXFH9N80Q Parameters

Technical/Catalog Information	IXFH9N80Q
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	9A
Rds On (Max) @ Id, Vgs	1.1 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	2200pF @ 25V
Power - Max	180W
Packaging	Tube
Gate Charge (Qg) @ Vgs	56nC @ 10V
Package / Case	TO-247AD
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFH9N80Q IXFH9N80Q

IXFH9N80Q Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_DSS V_DGR	T_J= 25°C to 150°C T_J= 25°C to 150°C; R_GS = 1 M	800 800	V V
V_GSV_GSM	Continuous Transient	±20 ±30	V V
I_D25I_DMI_AR	T_C = 25°C T_C = 25°C, pulse widthlimited by T_JM T_C = 25°C	9 36 9	A A A
E_ARE_AS	T_C= 25°C T_C= 25°C	20 700	mJ mJ
dv/dt	I_S I_DM, di/dt 100 A/s, V_DD V_DSS T_J 150°C, R_G = 2	5	V/ns
P_D	T_C= 25°C	180	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150
T_L	1.6 mm (0.063 in.) from case for 10 s	300
M_D	Mounting torque TO-264	1.13/10	Nm/lb.in.
Weight	TO-247 TO-268	6 4	g

IXFH9N80Q Features

· IXYS advanced low Qg process
· Low gate charge and capacitances
- easier to drive
- aster switching
·International standard packages
· Low RDS (on)
· Unclamped Inductive Switching (UIS) ated
· Molding epoxies meet UL 94 V-0 lammability classification

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