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IXFN120N20, IXFN130N30, IXFN140N20P

Table of contents:
Info of IXFN120N20
Info of IXFN130N30
Info of IXFN140N20P

IXFN120N20, IXFN130N30, IXFN140N20P Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products D/C:.

IXFN120N20, IXFN130N30, IXFN140N20P Datasheet download

Five Points

Part Number: IXFN120N20

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled:

D/C: .

Description: MOSFET N-CH 200V 115/60A SOT227B

Price Break

1
10
50
100
500
1000

Unit Price

42.81000
35.67500
28.54000
21.26000
19.26450
17.84007

Extended Price

42.81
356.75
1427.00
2126.00
9632.25
17840.07

(All prices are in USD) Prices for reference only

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IXFN120N20 Parameters

Technical/Catalog Information	IXFN120N20
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	120A
Rds On (Max) @ Id, Vgs	17 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	9100pF @ 25V
Power - Max	600W
Packaging	Tube
Gate Charge (Qg) @ Vgs	360nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IXFN120N20 IXFN120N20

IXFN120N20 Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_DSSV_DGR	T_J= 25°C to 150°C T_J = 25°C to 150°C; R_GS = 1 MΩ	200 200	V V
V_GS V_GSM	Continuous Transient	±20 ±30	V V
I_D25I_DM IAR	T_C= 25°C T_C = 25°C, pulse width limited by T_{JM T_C = 25°C}	120 480 120	A A A
E_AR E_AS	T_C = 25°C T_C= 25°C	64 4	mJ J
dv/dt	I_S I_DM, di/dt 100 A/µs, V_DD V_DSS T_J 150°C, R_G = 2 Ω	5	V/ns
P_D	T_C= 25°C	700	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
V_ISOL	50/60 Hz, RMS t = 1 min I_ISOL 1 mA t = 1 s	2500 3000	V~ V~
M_d	Mounting torque Terminal connection torque	1.5/13 1.5/13	Nm/lb.in. Nm/lb.in.
Weight		30	g

IXFN120N20 Features

·Encapsulating epoxy meets UL 94 V-0, flammability classification
·International standard package
·miniBLOC, with Aluminium nitride isolation
·Low R_{DS (on)} HDMOS^TM process
·Rugged polysilicon gate cell structure
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
·Fast intrinsic Rectifier

IXFN120N20 Typical Application

·DC-DC converters
·Battery chargers
·Switched-mode and resonant-mode power supplies
·DC choppers
·Temperature and lighting controls
·Low voltage relays

IXFN130N30 Parameters

Technical/Catalog Information	IXFN130N30
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	130A
Rds On (Max) @ Id, Vgs	22 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	14500pF @ 25V
Power - Max	700W
Packaging	Tube
Gate Charge (Qg) @ Vgs	380nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN130N30 IXFN130N30

IXFN140N20P Parameters

Technical/Catalog Information	IXFN140N20P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	115A
Rds On (Max) @ Id, Vgs	18 mOhm @ 70A, 10V
Input Capacitance (Ciss) @ Vds	7500pF @ 25V
Power - Max	680W
Packaging	Tube
Gate Charge (Qg) @ Vgs	240nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN140N20P IXFN140N20P

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