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IXTA1N100, IXTA1N100P, IXTA1N120P

Table of contents:
Info of IXTA1N100
Info of IXTA1N100P
Info of IXTA1N120P

IXTA1N100, IXTA1N100P, IXTA1N120P Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:TO-263 D/C:TO-

IXTA1N100, IXTA1N100P, IXTA1N120P Picture

IXTA1N100, IXTA1N100P, IXTA1N120P Datasheet download

Five Points

Part Number: IXTA1N100

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-263

D/C: TO-

Description: MOSFET N-CH 1200V 1A TO-263

Price Break

200

Unit Price

1.75440

Extended Price

350.88

(All prices are in USD) Prices for reference only

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IXTA1N100 Parameters

Technical/Catalog Information	IXTA1N100
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	1.5A
Rds On (Max) @ Id, Vgs	11 Ohm @ 1A, 10V
Input Capacitance (Ciss) @ Vds	400pF @ 25V
Power - Max	54W
Packaging	Tube
Gate Charge (Qg) @ Vgs	14.5nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTA1N100 IXTA1N100

IXTA1N100 Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
VC_ES V_CGR	T_J = 25°C to 150°C T_J= 25°C to 150°C; R_GE = 1 M	1000 1000	V V
V_GES V_GEM	Continuous Transient	±20 ±30	V V
I_D25 I_DM	TC = 25°C TC = 25°C, pulse width limited by TJM	21 84	A A
I_ARE_ARE_AS	T_C = 25°C T_C= 25°C	1.5 6 200	A mJ mJ
dv/dt	I_S IDM, di/dt 100 A/µs, V_DD V_DSS, T_J 150°C, R_G = 18 Ω	3	V/ns
P_D	T_C = 25°C	500	w
T_J T_JMT_stg		-55 ... +150 150 -55 ... +150	°C °C °C
M_d	Mounting torque	1.13/10	Nm/lb.in.
Weight		4	g
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s		300	°C

IXTA1N100 Features

· International standard packages
· High voltage, Low R_{DS (on)} HDMOS^TM process
· Rugged polysilicon gate cell structure
· Fast switching times

IXTA1N100 Typical Application

· Switch-mode and resonant-mode power supplies
· Flyback inverters
· DC choppers
· High frequency matching

IXTA1N100P Parameters

Technical/Catalog Information	IXTA1N100P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	1A
Rds On (Max) @ Id, Vgs	15 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	331pF @ 25V
Power - Max	50W
Packaging	Tube
Gate Charge (Qg) @ Vgs	15.5nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTA1N100P IXTA1N100P

IXTA1N120P Parameters

Technical/Catalog Information	IXTA1N120P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C	1A
Rds On (Max) @ Id, Vgs	20 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	550pF @ 25V
Power - Max	63W
Packaging	Tube
Gate Charge (Qg) @ Vgs	17.6nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTA1N120P IXTA1N120P

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