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IXTA8N50P, IXTB30N100L, IXTB62N50L

Table of contents:
Info of IXTA8N50P
Info of IXTB30N100L
Info of IXTB62N50L

IXTA8N50P, IXTB30N100L, IXTB62N50L Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:TO-263 D/C:08+/09+

IXTA8N50P, IXTB30N100L, IXTB62N50L Datasheet download

Five Points

Part Number: IXTA8N50P

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-263

D/C: 08+/09+

Description: MOSFET N-CH 500V 62A PLUS264

Price Break

1
10
50
100
500
1000

Unit Price

1.95000
1.56000
1.29000
1.12000
1.05300
.98000

Extended Price

1.95
15.60
64.50
112.00
526.50
980.00

(All prices are in USD) Prices for reference only

Attentive hint

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IXTA8N50P Parameters

Technical/Catalog Information	IXTA8N50P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	800 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	1050pF @ 25V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	20nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTA8N50P IXTA8N50P

IXTA8N50P Maximum Ratings

Symbol	Test Conditions	Maximum Ratings
V_DSS V_DGR	T_J= 25 to 150 T_J= 25 to 150; R_GS = 1M	500 500	V V
V_GES V_GEM	Continuous Transient	±30 ±40	V V
I_D25I_DM	T_C = 25 T_C = 25pulse width limited by TJM	8 14	A A
I_AR E_ARE_AS	T_C = 25 T_C = 25 T_C= 25	8 20 400	A mJ mJ
dv/dt	I_S I_DM, di/dt 100 A/s, V_DD V_DSS,T_J 150, R_G= 18	10	V/ns
PD	T_C = 25	150	W
T_JT_JMT_stg		-55 ... +150 150 -55 ... +150
T_L T_SOLD	1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s	300 260
M_d	Mounting torque (TO-220)	1.13/10 Nm/lb.in.
Weight	TO-220 TO-263	4 3	g g

IXTA8N50P Features

International standard packages
Unclamped Inductive Switching (UIS) rated
Low package inductance
- easy to drive and to protect

IXTB30N100L Parameters

Technical/Catalog Information	IXTB30N100L
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	450 mOhm @ 500mA, 20V
Input Capacitance (Ciss) @ Vds	13200pF @ 25V
Power - Max	800W
Packaging	Tube
Gate Charge (Qg) @ Vgs	545nC @ 20V
Package / Case	ISOPLUS264?
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTB30N100L IXTB30N100L

IXTB62N50L Parameters

Technical/Catalog Information	IXTB62N50L
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	62A
Rds On (Max) @ Id, Vgs	100 mOhm @ 500mA, 20V
Input Capacitance (Ciss) @ Vds	11500pF @ 25V
Power - Max	800W
Packaging	Tube
Gate Charge (Qg) @ Vgs	550nC @ 20V
Package / Case	ISOPLUS264?
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTB62N50L IXTB62N50L

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