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IXTH13N80(A), IXTH13N90(A), IXTH14N100

Table of contents:
Info of IXTH13N80(A)
Info of IXTH13N90(A)
Info of IXTH14N100

IXTH13N80(A), IXTH13N90(A), IXTH14N100 Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:IXYS D/C:07+

IXTH13N80(A), IXTH13N90(A), IXTH14N100 Picture

IXTH13N80(A), IXTH13N90(A), IXTH14N100 Datasheet download

Five Points

Part Number: IXTH13N80(A)

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: IXYS

D/C: 07+

Description: MOSFET N-CH 1000V 14A TO-247

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IXTH14N100 Parameters

Technical/Catalog Information	IXTH14N100
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	14A
Rds On (Max) @ Id, Vgs	820 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	5650pF @ 25V
Power - Max	360W
Packaging	Tube
Gate Charge (Qg) @ Vgs	195nC @ 10V
Package / Case	TO-247AD
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTH14N100 IXTH14N100

IXTH14N100 Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_CESV_CGR	T_J = 25 to 150 600 T_J= 25 to 150 ; R_GE = 1 M	1000 1000	V
V_GES V_GEM	Continuous Transient	±20 ±30	V V
I_D25 I_DM	T_C= 25 T_C= 25, pulse width limited by TJM	14 56	A A
P_D	T_C = 25	300	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150
M_d	Mounting torque, TO-247	1.13/10	Nm/lb.in.
Weight		6	g
Max. Lead Temperature for Soldering (1.6mm from case for 10s)		300	°C

IXTH14N100 Features

·International standard package JEDEC TO-247 AD
·Low R_{DS (on)} HDMOS^TM process
·Rugged polysilicon gate cell structure
·Fast switching times

IXTH14N100 Typical Application

·Switch-mode and resonant-mode power supplies
·Motor controls
·Uninterruptible Power Supplies (UPS)
·DC choppers

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