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IXTH17N55(A), IXTH1N100, IXTH20N50D

IXTH17N55(A), IXTH1N100, IXTH20N50D Selling Leads, Datasheet

MFG:IXYS  Category:Discrete Semiconductor Products  Package Cooled:TO-247  D/C:08+/09+

IXTH17N55(A), IXTH1N100, IXTH20N50D Picture

IXTH17N55(A), IXTH1N100, IXTH20N50D Datasheet download

Five Points

Part Number: IXTH17N55(A)

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-247

D/C: 08+/09+

Description: MOSFET N-CH 500V 20A TO-247

 

 
 
 
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IXTH17N55(A) Suppliers

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  • IXTC1088

  • Vendor: ixys D/C: 90+& Qty: DIP Note: new original  Adddate: 2024-04-28
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  • HDLBL Components   China
    Contact: Ms.Susan   MSN:susanwang82@live.cn
    Tel: 86-010-13910265534
    Fax: --
    (54)

About IXTA 3N120

PDF/DataSheet Download

Datasheet: IXTA 3N120

File Size: 576233 KB

Manufacturer:

Download : Click here to Download

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IXTH1N100 Suppliers

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  • IXTC1088

  • Vendor: ixys D/C: 90+& Qty: DIP Note: new original  Adddate: 2024-04-28
  • Inquire Now
  • HDLBL Components   China
    Contact: Ms.Susan   MSN:susanwang82@live.cn
    Tel: 86-010-13910265534
    Fax: --
    (54)

About IXTA 3N120

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Datasheet: IXTA 3N120

File Size: 576233 KB

Manufacturer:

Download : Click here to Download

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IXTH20N50D Suppliers

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  • IXTC1088

  • Vendor: ixys D/C: 90+& Qty: DIP Note: new original  Adddate: 2024-04-28
  • Inquire Now
  • HDLBL Components   China
    Contact: Ms.Susan   MSN:susanwang82@live.cn
    Tel: 86-010-13910265534
    Fax: --
    (54)

About IXTA 3N120

PDF/DataSheet Download

Datasheet: IXTA 3N120

File Size: 576233 KB

Manufacturer:

Download : Click here to Download

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IXTH1N100 Parameters

Technical/Catalog InformationIXTH1N100
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C1.5A
Rds On (Max) @ Id, Vgs11 Ohm @ 1A, 10V
Input Capacitance (Ciss) @ Vds 480pF @ 25V
Power - Max60W
PackagingTube
Gate Charge (Qg) @ Vgs23nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTH1N100
IXTH1N100

IXTH1N100 Maximum Ratings

VDS
VDGR
TJ = 25 to 150
TJ = 25 to 150; RGS = 1 M
1000
1000
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
TC = 25
TC = 25, pulse width limited by TJM
1.5
6
A
A
IAR
EAR
EAS
TC = 25
TC = 25
1.5
6
200
A
mJ
mJ
dv/dt IS IDM, di/dt 100 A/s, VDD VDSS,
TJ 150°C, RG = 18
3 V/ns
PD TC = 25°C 60 W
TJ
TJM
Tstg
  -55 ... +150
50
-55 ... +150


Md Mounting torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-268
TO-247
4
6
g
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
  300

IXTH1N100 Features

· International standard packages
· High voltage, Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
·Fast switching times

IXTH1N100 Typical Application

·Switch-mode and resonant-mode power supplies
· Flyback inverters
· DC choppers
· High frequency matching

IXTH20N50D Parameters

Technical/Catalog InformationIXTH20N50D
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs330 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 2500pF @ 25V
Power - Max400W
PackagingTube
Gate Charge (Qg) @ Vgs125nC @ 10V
Package / CaseTO-247
FET FeatureDepletion Mode
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTH20N50D
IXTH20N50D

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