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Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
300
°C
IXTH20N60 Features
·International standard packages ·Low RDS (on) HDMOSTM process ·Rugged polysilicon gate cell structure ·Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times
IXTH20N60 Typical Application
·Switch-mode and resonant-mode power supplies ·Motor control ·Uninterruptible Power Supplies (UPS) ·DC choppers
IXTH21N50 Parameters
Technical/Catalog Information
IXTH21N50
Vendor
IXYS
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
500V
Current - Continuous Drain (Id) @ 25° C
21A
Rds On (Max) @ Id, Vgs
250 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds
4200pF @ 25V
Power - Max
300W
Packaging
Tube
Gate Charge (Qg) @ Vgs
190nC @ 10V
Package / Case
TO-247AD
FET Feature
Standard
Drawing Number
*
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
IXTH21N50 IXTH21N50
IXTH21N50 Maximum Ratings
Symbol
Test Conditions
Maximum
Ratings
VCES VCGR
TJ = 25 to 150 600 TJ= 25 to 150 ; RGE = 1 M
500 500
V
VGES VGEM
Transient
±20 ±30
V V
ID25 IDM
TC = 25 TC = 25, pulse width limited by TJM
21 24 84 96
A A A A
PD
TC = 25
300
W
TJ TJM Tstg
-50 ... +150 150 -50 ... +150
°C °C °C
TL
1.6 mm (0.062 in.) from case for 10 s
300
°C
Md
Mounting torque
1.13/10
Nm/lb.in.
Weight
TO-204 TO-247
18 6
g g
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
300
°C
IXTH21N50 Features
·International standard packages ·Low RDS (on) HDMOSTM process ·Rugged polysilicon gate cell structure ·Low package inductance (< 5 nH) - easy to drive and to protect ·Fast switching times
IXTH21N50 Typical Application
·Switch-mode and resonant-mode power supplies ·Motor controls ·Uninterruptible Power Supplies (UPS) ·DC choppers