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IXTH24P20, IXTH26N50, IXTH26N60P

IXTH24P20, IXTH26N50, IXTH26N60P Selling Leads, Datasheet

MFG:IXYS  Category:Discrete Semiconductor Products  Package Cooled:IXYS  D/C:TO

IXTH24P20 Picture

IXTH24P20, IXTH26N50, IXTH26N60P Datasheet download

Five Points

Part Number: IXTH24P20

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: IXYS

D/C: TO

Description: MOSFET N-CH 600V 26A TO-247

 

 
 
 
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IXTH24P20 Suppliers

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  • IXTC1088

  • Vendor: ixys D/C: 90+& Qty: DIP Note: new original  Adddate: 2024-04-28
  • Inquire Now
  • HDLBL Components   China
    Contact: Ms.Susan   MSN:susanwang82@live.cn
    Tel: 86-010-13910265534
    Fax: --
    (54)

About IXTH24P20

PDF/DataSheet Download

Datasheet: IXTH24P20

File Size: 81245 KB

Manufacturer: IXYS [IXYS Corporation]

Download : Click here to Download

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IXTH26N50 Suppliers

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  • IXTC1088

  • Vendor: ixys D/C: 90+& Qty: DIP Note: new original  Adddate: 2024-04-28
  • Inquire Now
  • HDLBL Components   China
    Contact: Ms.Susan   MSN:susanwang82@live.cn
    Tel: 86-010-13910265534
    Fax: --
    (54)

About IXTA 3N120

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Datasheet: IXTA 3N120

File Size: 576233 KB

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IXTH26N60P Suppliers

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  • IXTC1088

  • Vendor: ixys D/C: 90+& Qty: DIP Note: new original  Adddate: 2024-04-28
  • Inquire Now
  • HDLBL Components   China
    Contact: Ms.Susan   MSN:susanwang82@live.cn
    Tel: 86-010-13910265534
    Fax: --
    (54)

About IXTA 3N120

PDF/DataSheet Download

Datasheet: IXTA 3N120

File Size: 576233 KB

Manufacturer:

Download : Click here to Download

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IXTH24P20 Parameters

Technical/Catalog InformationIXTH24P20
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C24A
Rds On (Max) @ Id, Vgs110 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4200pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs150nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTH24P20
IXTH24P20

IXTH24P20 Maximum Ratings

Symbol Test Conditions Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
-200
-200
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
-24
-96
-24

A
A
A

EAR TC = 25°C 30 mJ
PD TC = 25°C 300 W
TJ
TJM
Tstg
1.6 mm (0.063 in) from case for 10 s -55 ... +150
150
-55 ... +150
°C
°C
°C
TL Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300 °C
Md Mounting torque 1.13/10 Nm/lb.in.
Weight
6 g

IXTH24P20 Features

• International standard package JEDEC TO-247 AD
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance (<5 nH)
   - easy to drive and to protect

IXTH24P20 Typical Application

• High side switching
• Push-pull amplifiers
• DC choppers
• Automatic test equipment

IXTH26N60P Parameters

Technical/Catalog InformationIXTH26N60P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C26A
Rds On (Max) @ Id, Vgs270 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4150pF @ 25V
Power - Max460W
PackagingTube
Gate Charge (Qg) @ Vgs72nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTH26N60P
IXTH26N60P

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