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IXTH30N60P, IXTH35N30, IXTH36N50P

IXTH30N60P, IXTH35N30, IXTH36N50P Selling Leads, Datasheet

MFG:IXYS  Category:Discrete Semiconductor Products  Package Cooled:TO-247  D/C:TO-247

IXTH30N60P Picture

IXTH30N60P, IXTH35N30, IXTH36N50P Datasheet download

Five Points

Part Number: IXTH30N60P

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-247

D/C: TO-247

Description: MOSFET N-CH 500V 36A TO-247

 

 
 
 
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IXTH30N60P Suppliers

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  • IXTC1088

  • Vendor: ixys D/C: 90+& Qty: DIP Note: new original  Adddate: 2024-04-27
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  • HDLBL Components   China
    Contact: Ms.Susan   MSN:susanwang82@live.cn
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    (54)

About IXTA 3N120

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Datasheet: IXTA 3N120

File Size: 576233 KB

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IXTH35N30 Suppliers

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  • IXTC1088

  • Vendor: ixys D/C: 90+& Qty: DIP Note: new original  Adddate: 2024-04-27
  • Inquire Now
  • HDLBL Components   China
    Contact: Ms.Susan   MSN:susanwang82@live.cn
    Tel: 86-010-13910265534
    Fax: --
    (54)

About IXTH35N30

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Datasheet: IXTH35N30

File Size: 110467 KB

Manufacturer: IXYS [IXYS Corporation]

Download : Click here to Download

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IXTH36N50P Suppliers

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  • IXTC1088

  • Vendor: ixys D/C: 90+& Qty: DIP Note: new original  Adddate: 2024-04-27
  • Inquire Now
  • HDLBL Components   China
    Contact: Ms.Susan   MSN:susanwang82@live.cn
    Tel: 86-010-13910265534
    Fax: --
    (54)

About IXTA 3N120

PDF/DataSheet Download

Datasheet: IXTA 3N120

File Size: 576233 KB

Manufacturer:

Download : Click here to Download

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Related Part Number

IXTH30N60P Parameters

Technical/Catalog InformationIXTH30N60P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs240 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 5050pF @ 25V
Power - Max540W
PackagingTube
Gate Charge (Qg) @ Vgs82nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTH30N60P
IXTH30N60P

IXTH35N30 General Description

·Switch-mode and resonant-mode power supplies
·Motor controls
·Uninterruptible Power Supplies (UPS)
·DC choppers

IXTH35N30 Maximum Ratings

Symbol Test Conditions Maximum Ratings
VCES
VCGR
TJ = 25 to 150 600
TJ= 25 to 150 ; RGE = 1 M
1000
1000
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
ID25
IDM
TC = 25
TC = 25, pulse width limited by TJM
35
40
140
160
A
A
A
A
PD TC = 25 300 W
TJ
TJM
Tstg
  -55 ... +150
150
-55 ... +150


Md Mounting torque, TO-247 1.13/10 Nm/lb.in.
Weight TO-204
TO-247
18
6
g
g
Max. Lead Temperature for
Soldering (1.6mm from case for 10s)
300
°C

IXTH35N30 Features

· International standard packages
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Low package inductance (< 5 nH)
    - easy to drive and to protect
· Fast switching times

IXTH36N50P Parameters

Technical/Catalog InformationIXTH36N50P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C36A
Rds On (Max) @ Id, Vgs170 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 5500pF @ 25V
Power - Max540W
PackagingTube
Gate Charge (Qg) @ Vgs85nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTH36N50P
IXTH36N50P

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