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Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
300
Md
Mounting torque
1.13/10
Nm/lb.in
Weight
6
g
IXTH36P10 Features
• International standard package JEDEC TO-247 AD • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance (<5 nH) - easy to drive and to protect
IXTH36P10 Typical Application
• High side switching • Push-pull amplifiers • DC choppers • Automatic test equipment
IXTH3N120 Parameters
Technical/Catalog Information
IXTH3N120
Vendor
IXYS
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C
3A
Rds On (Max) @ Id, Vgs
4.5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds
1300pF @ 25V
Power - Max
150W
Packaging
Tube
Gate Charge (Qg) @ Vgs
39nC @ 10V
Package / Case
TO-247
FET Feature
Standard
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
IXTH3N120 IXTH3N120
IXTH3N120 Features
·International standard packages ·Low RDS (on) ·Rated for unclamped Inductive load Switching (UIS) ·Molding epoxies meet UL 94 V-0 flammability classification
IXTH3N120 Typical Application
·Easy to mount ·Space savings ·High power density
IXTH40N30 Parameters
Technical/Catalog Information
IXTH40N30
Vendor
IXYS
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
300V
Current - Continuous Drain (Id) @ 25° C
40A
Rds On (Max) @ Id, Vgs
85 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds
4600pF @ 25V
Power - Max
300W
Packaging
Tube
Gate Charge (Qg) @ Vgs
220nC @ 10V
Package / Case
TO-247AD
FET Feature
Standard
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
IXTH40N30 IXTH40N30
IXTH40N30 General Description
·Switch-mode and resonant-mode power supplies ·Motor controls ·Uninterruptible Power Supplies (UPS) ·DC choppers
IXTH40N30 Maximum Ratings
Symbol
Test Conditions
Maximum
Ratings
VCES VCGR
TJ = 25 to 150 600 TJ= 25 to 150 ; RGE = 1 M
1000 1000
V
VGES VGEM
Continuous Transient
±20 ±30
V V
ID25 IDM
TC = 25 TC = 25, pulse width limited by TJM
35 40 140 160
A A A A
PD
TC = 25
300
W
TJ TJM Tstg
-55 ... +150 150 -55 ... +150
Md
Mounting torque, TO-247
1.13/10
Nm/lb.in.
Weight
TO-204 TO-247
18 6
g g
Max. Lead Temperature for Soldering (1.6mm from case for 10s)
300
°C
IXTH40N30 Features
· International standard packages · Low RDS (on) HDMOSTM process · Rugged polysilicon gate cell structure · Low package inductance (< 5 nH) - easy to drive and to protect · Fast switching times
