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IXTH88N15, IXTH9122, IXTH9127

Table of contents:
Info of IXTH88N15
Info of IXTH9122
Info of IXTH9127

IXTH88N15, IXTH9122, IXTH9127 Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:IXYS D/C:O6+

IXTH88N15, IXTH9122, IXTH9127 Datasheet download

Five Points

Part Number: IXTH88N15

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: IXYS

D/C: O6+

Description: MOSFET P-CH 150V 88A TO-247AD

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IXTH88N15 Parameters

Technical/Catalog Information	IXTH88N15
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	88A
Rds On (Max) @ Id, Vgs	22 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	4000pF @ 25V
Power - Max	400W
Packaging	Tube
Gate Charge (Qg) @ Vgs	170nC @ 10V
Package / Case	TO-247AD
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTH88N15 IXTH88N15

IXTH88N15 Maximum Ratings

Symbol	Test Conditions
V_DSS	T_J= 25 to 150	150	V
V_DGR	T_J= 25 to 150;R_GS =1 M	150	V
V_GS	Continuous	±20	V
V_GSM	Transient	±30	V
I_D25	T_C = 25	88	A
I_DM	T_C = 25, pulse width limited by TJM	352	A
I_AR	T_C = 25	88	A
E_AR	T_C = 25	50	mJ
E_AS	T_C= 25	1.5	J
dv/dt	I_SI_DM, di/dt 100 A/s, V_DDV_DSS	5	V/ns
P_D	T_J150, RG = 2
	T_C = 25	400	W
T_J		-55.+150
T_JM		150
T_stg		-55.+150
T_L	1.6 mm (0.062 in.) from case for 10 s	300
M_d	Mounting torque	1.13/10	Nm/lb.in.
Weight	TO-247 AD	6	g
	TO-268	4	g

IXTH88N15 Features

·International standard packages
·Low R_{DS (on)} HDMOS^TM process
·Rugged polysilicon gate cell structure
·Unclamped Inductive Switching (UIS)rated
·Low package inductance
-easy to drive and to protect

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