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Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
300
°C
Md
Mounting torque (TO-247)
1.13/10
Nm/lb.in
Weight
TO-247 AD TO-268
6 4
g g
IXTH8P50 Features
International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
IXTH8P50 Typical Application
Easy to mount Space savings High power density
IXTH96N20P Parameters
Technical/Catalog Information
IXTH96N20P
Vendor
IXYS
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25° C
96A
Rds On (Max) @ Id, Vgs
24 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds
4800pF @ 25V
Power - Max
600W
Packaging
Tube
Gate Charge (Qg) @ Vgs
145nC @ 10V
Package / Case
TO-247
FET Feature
Standard
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
IXTH96N20P IXTH96N20P
IXTH96N20P Features
·International standard packages ·Unclamped Inductive Switching (UIS) rated ·Low package inductance - easy to drive and to protect
