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IXTK62N25, IXTK74N20, IXTK80N25

Table of contents:
Info of IXTK62N25
Info of IXTK74N20
Info of IXTK80N25

IXTK62N25, IXTK74N20, IXTK80N25 Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:IXYS D/C:07+

IXTK62N25, IXTK74N20, IXTK80N25 Datasheet download

Five Points

Part Number: IXTK62N25

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: IXYS

D/C: 07+

Description: MOSFET N-CH 250V 80A TO-264

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IXTK62N25 Parameters

Technical/Catalog Information	IXTK62N25
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	62A
Rds On (Max) @ Id, Vgs	35 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	5400pF @ 25V
Power - Max	390W
Packaging	Tube
Gate Charge (Qg) @ Vgs	240nC @ 10V
Package / Case	TO-264
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTK62N25 IXTK62N25

IXTK62N25 Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_CES V_CGR	T_J = 25°C to 150°C T_J = 25°C to 150°C; R_GE = 1 MΩ	250 250	V V
V_GES V_GEM	Continuous Transient	±20 ±30	V V
I_D25I_DMI_AR	T_C = 25°C T_C = 90°C T_C = 25°C, 1 ms	62 248 62	A A A
E_ARE_AS	T_C = 25°C T_C = 25°C	45 1.5	mJ J
dv/dt	I_S I_DM, di/dt 100 A/µs, V_DD V_DSS T_J 150°C, R_G = 2 Ω	5	V/ns
P_D	T_C = 25°C	390	W
T_J T_JMT_stg		-55 ... +150 150 -55 ... +150	°C °C °C
T_L	1.6 mm (0.063 in.) from case for 10 s	300
M_d	Mounting torque	0.7/6	Nm/lb.in.
Weight	TO-264	10	g

IXTK62N25 Features

• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• International standard package
• Fast switching times

IXTK62N25 Typical Application

• Motor controls
• DC choppers
• Switched-mode power supplies

IXTK74N20 Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_DSS V_DGR	T_J = 25°C to 150°C T_J = 25°C to 150°C; R_GS = 1 M	200 200	V V
V_GS V_GSM	Continuous Transient	±20 ±30	V V
I_D25 I_DM I_AR	T_C = 25°C T_C= 25°C, pulse width limited by T_JM T_C= 25°C	74N20 74 68N20 68 74N20 296 68N20 272	A A A
E_AR	T_C = 25°C	74N20 416 68N20 300	W W
T_J T_JM T_stg		-55 ... +150 150 Tstg -55 ... +150	°C °C °C
M_d	Mounting torque	1.13/10	Nm/lb.in.
Weight		TO-264 10 TO-247 6	g
Max lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s		300	°C

IXTK74N20 Features

· Low R_{DS (on)} HDMOSTM process
· Rugged polysilicon gate cell structure
· International standard package
· Fast switching times

IXTK74N20 Typical Application

· Motor controls
· DC choppers
· Uninterruptable Power Supplies (UPS)
· Switch-mode and resonant-mode

IXTK80N25 Parameters

Technical/Catalog Information	IXTK80N25
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	33 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	6000pF @ 25V
Power - Max	540W
Packaging	Tube
Gate Charge (Qg) @ Vgs	240nC @ 10V
Package / Case	TO-264AA
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTK80N25 IXTK80N25

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