IXTM10N90, IXTM11N100, IXTM11N80 Selling Leads, Datasheet
MFG:IXYS Package Cooled:IXYS D/C:96+
IXTM10N90, IXTM11N100, IXTM11N80 Datasheet download
Part Number: IXTM10N90
MFG: IXYS
Package Cooled: IXYS
D/C: 96+
IXTM10N90, IXTM11N100, IXTM11N80
- Table of contents:
Info of IXTM10N90
Info of IXTM11N100
Info of IXTM11N80
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About IXTA 3N120
PDF/DataSheet Download
Datasheet: IXTA 3N120
File Size: 576233 KB
Manufacturer:
Download : Click here to Download
About IXTA 3N120
PDF/DataSheet Download
Datasheet: IXTA 3N120
File Size: 576233 KB
Manufacturer:
Download : Click here to Download
About IXTM11N80
PDF/DataSheet Download
Datasheet: IXTM11N80
File Size: 101123 KB
Manufacturer: IXYS [IXYS Corporation]
Download : Click here to Download
IXTM11N80 Maximum Ratings
| Symbol | Test Conditions | Maximum | Ratings |
| VCES VCGR |
TJ = 25 to 150 600 TJ= 25 to 150 ; RGE = 1 M |
800 800 |
V |
| VGES VGEM |
Transient | ±20 ±30 |
V V |
| ID25 IDM |
TC = 25 TC = 25, pulse width limited by TJM |
11 13 44 52 |
A A |
| PD | TC = 25 | 300 | W |
| TJ TJM Tstg |
-50 ... +150 150 -50 ... +150 |
°C °C °C | |
| TL | 1.6 mm (0.062 in.) from case for 10 s | 300 | °C |
| Md | Mounting torque | 1.13/10 | Nm/lb.in. |
| Weight | TO-204 TO-247 |
18 6 |
g g |
| Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s |
300 | °C | |
IXTM11N80 Features
· International standard packages
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Low package inductance (< 5 nH)
- easy to drive and to protect
· Fast switching times
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Low package inductance (< 5 nH)
- easy to drive and to protect
· Fast switching times
IXTM11N80 Typical Application
·Switch-mode and resonant-mode power supplies
·Motor controls
·Uninterruptible Power Supplies (UPS)
·DC choppers
·Motor controls
·Uninterruptible Power Supplies (UPS)
·DC choppers
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