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IXTM12N50, IXTM12N50A, IXTM12N90

Table of contents:
Info of IXTM12N50
Info of IXTM12N50A
Info of IXTM12N90

IXTM12N50, IXTM12N50A, IXTM12N90 Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:IXYS D/C:TO-3

IXTM12N50, IXTM12N50A, IXTM12N90 Picture

IXTM12N50, IXTM12N50A, IXTM12N90 Datasheet download

Five Points

Part Number: IXTM12N50

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: IXYS

D/C: TO-3

Description: MOSFET N-CH 900V 12A TO-204A4E

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IXTM12N50A Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_CES V_CGR	T_J= 25°C to 150°C T_J = 25°C to 150°C; R_GE = 1 M	500 500	V V
V_GES V_GEM	Continuous Transient	±20 ±30	V
I_D25_IDM	T_C= 25°C T_C = 25°C, pulse width limited by TJM	12 48	A A A
P_D	T_C= 25°C	180	W
T_J T_JM T_stg	1.6 mm (0.063 in) from case for 10 s	-55 ... +150 150 -55 ... +150	°C °C °C
Md	Mounting torque	1.13/10	Nm/lb.in.
Weight	TO-204 TO-247	18 6	g g
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s		300	°C

IXTM12N50A Features

· International standard packages
· Low R_{DS (on)} HDMOS^TMprocess
· Rugged polysilicon gate cell structure
· Low package inductance (< 5 nH)
- easy to drive and to protect
· Fast switching times

IXTM12N50A Typical Application

· Switch-mode and resonant-mode power supplies
· Motor controls
· Uninterruptible Power Supplies (UPS)
· DC choppers

IXTM12N90 Parameters

Technical/Catalog Information	IXTM12N90
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	900 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	4500pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	170nC @ 10V
Package / Case	TO-204, TO-3
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTM12N90 IXTM12N90

IXTM12N90 Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_CESV_CGR	T_J = 25 to 150 600 T_J= 25 to 150 ; R_GE = 1 M	900 900	V
V_GES V_GEM	Transient	±20 ±30	V V
I_D25 I_DM	T_C = 25 T_C = 25, pulse width limited by TJM	12 48	A A
P_D	T_C = 25	300	W
T_J T_JM T_stg		-50 ... +150 150 -50 ... +150	°C °C °C
T_L	1.6 mm (0.062 in.) from case for 10 s	300	°C
M_d	Mounting torque	1.13/10	Nm/lb.in.
Weight	TO-204 TO-247	18 6	g g
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s		300	°C

IXTM12N90 Features

·International standard packages
·Low R_{DS (on)} HDMOS^TM process
·Rugged polysilicon gate cell structure
·Low package inductance (< 5 nH)
- easy to drive and to protect
·Fast switching times

IXTM12N90 Typical Application

·Switch-mode and resonant-mode power supplies
·Motor controls
·Uninterruptible Power Supplies (UPS)
·DC choppers

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