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IXTP01N100D, IXTP01N90, IXTP02N50D

Table of contents:
Info of IXTP01N100D
Info of IXTP01N90
Info of IXTP02N50D

IXTP01N100D, IXTP01N90, IXTP02N50D Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:TO

IXTP01N100D, IXTP01N90, IXTP02N50D Datasheet download

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Part Number: IXTP02N50D

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-220

D/C: TO

Description: MOSFET N-CH 500V 200MA TO-220

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IXTP01N100D Parameters

Technical/Catalog Information	IXTP01N100D
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	100mA
Rds On (Max) @ Id, Vgs	110 Ohm @ 50mA, 0V
Input Capacitance (Ciss) @ Vds	120pF @ 25V
Power - Max	1.1W
Packaging	Tube
Gate Charge (Qg) @ Vgs	-
Package / Case	TO-220
FET Feature	Depletion Mode
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTP01N100D IXTP01N100D

IXTP01N100D Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
VC_ES V_CGR	T_J = 25°C to 150°C T_J= 25°C to 150°C; R_GE = 1 M	1000 1000	V V
V_GES V_GEM	Continuous Transient	±20 ±30	V V
I_D25 I_DM	T_C = 25°C T_C = 25°C, pulse width limited by TJM	100 400	A A
P_D	T_C = 25°C T_A = 25°C	25 1.1	W W
T_J T_JMT_stg		-55 ... +150 150 -55 ... +150	°C °C °C
T_L	1.6 mm (0.063 in.) from case for 10 s	300	°C

IXTP01N100D Features

·Normally ON mode
·Low R_{DS (on)} HDMOS^TM process
·Rugged polysilicon gate cell structure
·Fast switching speed

IXTP01N100D Typical Application

·Level shifting
·Triggers
·Solid state relays
·Current regulators

IXTP02N50D Parameters

Technical/Catalog Information	IXTP02N50D
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	200mA
Rds On (Max) @ Id, Vgs	30 Ohm @ 50mA, 0V
Input Capacitance (Ciss) @ Vds	120pF @ 25V
Power - Max	1.1W
Packaging	Tube
Gate Charge (Qg) @ Vgs	-
Package / Case	TO-220
FET Feature	Depletion Mode
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTP02N50D IXTP02N50D

IXTP02N50D Maximum Ratings

Symbol	Conditions	Ratings
V_DSX V_DGX	T_J = 25 to 150 T_J = 25 to 150	500 V 500 V
V_GS V_GSM	Continuous Transient	± 20 V ± 30 V
I_DSS I_DM	T_C= 25; T_J = 25 to 150 T_C= 25, pulse width limited by T_J	200 mA 800 mA
P_D	T_C= 25 T = 25	25 W 1.1 W
T_JT_JM T_stg		-55 ... +150 150 -55 ... +150
T_LT_ISOL	1.6 mm (0.063 in.) from case for 10 s Plastic case for 10 s (IXTU)	300 300
M_d	Mounting torque TO-220	1.3 / 10 Nm/lb.
Weight	TO-220 TO-251 TO-252	4 g 0.8 g 0.8 g

IXTP02N50D Features

· Normally ON mode
· Low R_{DS (on)} HDMOSTM process
· Rugged polysilicon gate cell structure
· Fast switching speed

IXTP02N50D Typical Application

· Level shifting
· Triggers
· Solid state relays
· Current regulators

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