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IXTP30N08, IXTP3N110, IXTP3N120

Table of contents:
Info of IXTP30N08
Info of IXTP3N110
Info of IXTP3N120

IXTP30N08, IXTP3N110, IXTP3N120 Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:09+ D/C:08+/09+

IXTP30N08, IXTP3N110, IXTP3N120 Datasheet download

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Part Number: IXTP3N120

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: 09+

D/C: 08+/09+

Description: MOSFET N-CH 1.2KV 3A TO-220AB

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IXTP3N110 Parameters

Technical/Catalog Information	IXTP3N110
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1100V (1.1kV)
Current - Continuous Drain (Id) @ 25° C	3A
Rds On (Max) @ Id, Vgs	4.5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	1350pF @ 25V
Power - Max	200W
Packaging	Tube
Gate Charge (Qg) @ Vgs	42nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTP3N110 IXTP3N110

IXTP3N110 Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
VC_ES V_CGR	T_J = 25°C to 150°C T_J= 25°C to 150°C; R_GE = 1 M	3N120 1200 3N110 1100 3N120 1200 3N110 1100	V V
V_GES V_GEM	Continuous Transient	±20 ±30	V V
I_D25 I_DMI_AR	T_C = 25°C T_C = 25°C, pulse width limited by TJM T_C = 25°C	3 12 3	A A A
E_AR E_AS	T_C = 25°C	20 700	mJ mJ
dv/dt	IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C, RG = 2 Ω	5	V/ns
P_D	TC = 25°C	25	W
T_J T_JMT_stg		-55 ... +150 150 -55 ... +150	°C °C °C
T_L	1.6 mm (0.063 in.) from case for 10 s	300	°C
M_d	Mounting torque (TO-220)	1.13/10	Nm/lb.in.
Weight	TO-220 TO-263	4 2	g g

IXTP3N110 Features

· International standard packages
· Low RDS (on)
· Rated for unclamped Inductive load Switching (UIS)
· Molding epoxies meet UL 94 V-0 flammability classification

IXTP3N110 Typical Application

· Easy to mount
· Space savings
· High power density

IXTP3N120 Parameters

Technical/Catalog Information	IXTP3N120
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C	3A
Rds On (Max) @ Id, Vgs	4.5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	1350pF @ 25V
Power - Max	200W
Packaging	Tube
Gate Charge (Qg) @ Vgs	42nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTP3N120 IXTP3N120

IXTP3N120 Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
VC_ES V_CGR	T_J = 25°C to 150°C T_J= 25°C to 150°C; R_GE = 1 M	3N120 1200 3N110 1100 3N120 1200 3N110 1100	V V
V_GES V_GEM	Continuous Transient	±20 ±30	V V
I_D25 I_DMI_AR	T_C = 25°C T_C = 25°C, pulse width limited by TJM T_C = 25°C	3 12 3	A A A
E_AR E_AS	T_C = 25°C	20 700	mJ mJ
dv/dt	IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C, RG = 2 Ω	5	V/ns
P_D	TC = 25°C	25	W
T_J T_JMT_stg		-55 ... +150 150 -55 ... +150	°C °C °C
T_L	1.6 mm (0.063 in.) from case for 10 s	300	°C
M_d	Mounting torque (TO-220)	1.13/10	Nm/lb.in.
Weight	TO-220 TO-263	4 2	g g

IXTP3N120 Features

· International standard packages
· Low RDS (on)
· Rated for unclamped Inductive load Switching (UIS)
· Molding epoxies meet UL 94 V-0 flammability classification

IXTP3N120 Typical Application

· Easy to mount
· Space savings
· High power density

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