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IXTQ110N055P, IXTQ110N10P, IXTQ120N15P

Table of contents:
Info of IXTQ110N055P
Info of IXTQ110N10P
Info of IXTQ120N15P

IXTQ110N055P, IXTQ110N10P, IXTQ120N15P Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:TO-3P D/C:08+/09+

IXTQ110N055P, IXTQ110N10P, IXTQ120N15P Picture

IXTQ110N055P, IXTQ110N10P, IXTQ120N15P Datasheet download

Five Points

Part Number: IXTQ110N055P

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-3P

D/C: 08+/09+

Description: MOSFET N-CH 150V 120A TO-3P

Price Break

150

Unit Price

1.91887

Extended Price

287.83

(All prices are in USD) Prices for reference only

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IXTQ110N055P Parameters

Technical/Catalog Information	IXTQ110N055P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	110A
Rds On (Max) @ Id, Vgs	13.5 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	2210pF @ 25V
Power - Max	390W
Packaging	Tube
Gate Charge (Qg) @ Vgs	76nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTQ110N055P IXTQ110N055P

IXTQ110N055P Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_CESV_CGR	T_J = 25 to 150 600 T_J= 25 to 150 ; R_GE = 1 M	55 55	V
V_GES V_GEM	Continuous Transient	±20 ±30	V V
I_D25 I_DM	T_C = 25 External lead current limit T_C = 25, pulse width limited by TJM	110 75 250	A A
I_AR E_ARE_AS	T_C = 25 T_C = 25 T_C = 25	110 30 1.0	A mJ J
dv/dt	I_S I_DM, di/dt 100 A/µs, V_DD V_DSS, T_J 150°C, R_G = 4 Ω	10	V/ns
P_D	T_C = 25	330	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
T_L	1.6 mm (0.062 in.) from case for 10 s	300	°C
M_d	Mounting torque(TO-3P / TO-220)	1.13/10	Nm/lb.in.
Weight	TO-3P TO-220 TO-263	5.5 4 3	g g g

IXTQ110N055P Features

·International standard packages
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
- easy to drive and to protect

IXTQ110N055P Typical Application

·Easy to mount
·Space savings
·High power density

IXTQ110N10P Parameters

Technical/Catalog Information	IXTQ110N10P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	110A
Rds On (Max) @ Id, Vgs	15 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	3550pF @ 25V
Power - Max	480W
Packaging	Tube
Gate Charge (Qg) @ Vgs	110nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTQ110N10P IXTQ110N10P

IXTQ110N10P Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_CESV_CGR	T_J = 25 to 150 600 T_J= 25 to 150 ; R_GE = 1 M	100 100	V
V_GES V_GEM	Continuous Transient	±20 ±30	V V
I_D25 I_DM	T_C = 25 External lead current limit T_C = 25, pulse width limited by TJM	110 75 250	A A A
IAR EAR EAS	T_C = 25 T_C = 25 T_C = 25	60 40 1.0	A mJ J
dv/dt	I_S I_DM, di/dt 100 A/µs, V_DD V_DSS, T_J 150°C, RG = 4 Ω	10	V/ns
P_D	T_C = 25	480	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
TL	1.6 mm (0.062 in.) from case for 10 s	300	°C
M_d	Mounting torque (TO-3P)	1.13/10	Nm/lb.in.
Weight	TO-3P TO-268	5.5 5.0	g g

IXTQ110N10P Features

·International standard packages
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
- easy to drive and to protect

IXTQ110N10P Typical Application

·Easy to mount
·Space savings
·High power density

IXTQ120N15P Parameters

Technical/Catalog Information	IXTQ120N15P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	120A
Rds On (Max) @ Id, Vgs	16 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	4900pF @ 25V
Power - Max	600W
Packaging	Tube
Gate Charge (Qg) @ Vgs	150nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTQ120N15P IXTQ120N15P

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