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IXTQ69N30P, IXTQ74N20P, IXTQ75N10P

Table of contents:
Info of IXTQ69N30P
Info of IXTQ74N20P
Info of IXTQ75N10P

IXTQ69N30P, IXTQ74N20P, IXTQ75N10P Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:TO-3P D/C:08+/09+

IXTQ69N30P, IXTQ74N20P, IXTQ75N10P Picture

IXTQ69N30P, IXTQ74N20P, IXTQ75N10P Datasheet download

Five Points

Part Number: IXTQ69N30P

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-3P

D/C: 08+/09+

Description: MOSFET N-CH 100V 75A TO-3P

Price Break

Unit Price

3.62300

Extended Price

326.07

(All prices are in USD) Prices for reference only

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IXTQ69N30P Parameters

Technical/Catalog Information	IXTQ69N30P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	69A
Rds On (Max) @ Id, Vgs	49 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	4960pF @ 25V
Power - Max	500W
Packaging	Tube
Gate Charge (Qg) @ Vgs	180nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTQ69N30P IXTQ69N30P

IXTQ69N30P Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_CESV_CGR	T_J = 25 to 150 600 T_J= 25 to 150 ; R_GE = 1 M	300 300	V
V_GES V_GEM	Transient	±20 ±30	V V
I_D25 I_DM	T_C = 25 T_C = 25, pulse width limited by TJM	69 200	A A
I_AR E_ARE_AS	T_C = 25 T_C = 25 T_C = 25	69 50 1.5	A mJ J
dv/dt	I_S I_DM, di/dt 100 A/µs, V_DD V_DSS, T_J 150°C, R_G = 4 Ω	10	V/ns
P_D	T_C = 25	500	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
T_L	1.6 mm (0.062 in.) from case for 10 s	300	°C
M_d	Mounting torque (TO-3P)	1.13/10	Nm/lb.in.
Weight	TO-3P TO-268	5.5 5.0	g g

IXTQ69N30P Features

· International standard packages
· Unclamped Inductive Switching (UIS) rated
· Low package inductance
- easy to drive and to protect

IXTQ69N30P Typical Application

·Easy to mount
·Space savings
·High power density

IXTQ74N20P Parameters

Technical/Catalog Information	IXTQ74N20P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	74A
Rds On (Max) @ Id, Vgs	34 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	3300pF @ 25V
Power - Max	480W
Packaging	Tube
Gate Charge (Qg) @ Vgs	107nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTQ74N20P IXTQ74N20P

IXTQ75N10P Parameters

Technical/Catalog Information	IXTQ75N10P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	25 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	2250pF @ 25V
Power - Max	360W
Packaging	Tube
Gate Charge (Qg) @ Vgs	74nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTQ75N10P IXTQ75N10P

IXTQ75N10P Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_CESV_CGR	T_J = 25 to 150 600 T_J= 25 to 150 ; R_GE = 1 M	100 100	V
V_GES V_GEM	Continuous Transient	±20 ±30	V V
I_D25 I_DM	T_C= 25 T_C= 25, pulse width limited by TJM	75 200	A A A A
I_AR E_AR E_AS	T_C = 25°C T_C = 25°C T_C = 25°C	50 30 1.0	A mJ J
dv/dt	I_S I_DM, di/dt 100 A/µs, V_DD V_DSS, T_J 150°C, RG = 10 Ω	10	V/ns
P_D	T_C = 25	300	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
T_L	1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s	300 260	°C °C
M_d	Mounting torque, TO-247	1.13/10	Nm/lb.in.
Weight	TO-3P TO-220 TO-263	5.5 4 3	g g g

IXTQ75N10P Features

·International standard packages
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
- easy to drive and to protect

IXTQ75N10P Typical Application

·Easy to mount
·Space savings
·High power density

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