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IXTT170N10P, IXTT1N100, IXTT20N50D

Table of contents:
Info of IXTT170N10P
Info of IXTT1N100
Info of IXTT20N50D

IXTT170N10P, IXTT1N100, IXTT20N50D Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:TO-268 D/C:08+/09+

IXTT170N10P, IXTT1N100, IXTT20N50D Picture

IXTT170N10P, IXTT1N100, IXTT20N50D Datasheet download

Five Points

Part Number: IXTT170N10P

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-268

D/C: 08+/09+

Description: MOSFET N-CH 500V 20A TO-268

Price Break

Unit Price

5.37000

Extended Price

322.20

(All prices are in USD) Prices for reference only

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IXTT170N10P Parameters

Technical/Catalog Information	IXTT170N10P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	170A
Rds On (Max) @ Id, Vgs	9 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	6000pF @ 25V
Power - Max	714W
Packaging	Tube
Gate Charge (Qg) @ Vgs	198nC @ 10V
Package / Case	TO-268
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTT170N10P IXTT170N10P

IXTT1N100 Parameters

Technical/Catalog Information	IXTT1N100
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	1.5A
Rds On (Max) @ Id, Vgs	11 Ohm @ 1A, 10V
Input Capacitance (Ciss) @ Vds	480pF @ 25V
Power - Max	60W
Packaging	Tube
Gate Charge (Qg) @ Vgs	23nC @ 10V
Package / Case	TO-268
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTT1N100 IXTT1N100

IXTT1N100 Maximum Ratings

V_DS V_DGR	T_J = 25 to 150 T_J = 25 to 150; RGS = 1 M	1000 1000	V V
V_GS V_GSM	Continuous Transient	±20 ±30	V V
I_D25 I_DM	T_C = 25 T_C = 25, pulse width limited by TJM	1.5 6	A A
I_AR E_AR E_AS	T_C = 25 T_C = 25	1.5 6 200	A mJ mJ
dv/dt	IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150°C, RG = 18	3	V/ns
P_D	TC = 25°C	60	W
T_J T_JM T_stg		-55 ... +150 50 -55 ... +150
M_d	Mounting torque (TO-247)	1.13/10	Nm/lb.in.
W_eight	TO-268 TO-247	4 6	g g
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s		300

IXTT1N100 Features

· International standard packages
· High voltage, Low R_{DS (on)} HDMOS^TM process
· Rugged polysilicon gate cell structure
·Fast switching times

IXTT1N100 Typical Application

·Switch-mode and resonant-mode power supplies
· Flyback inverters
· DC choppers
· High frequency matching

IXTT20N50D Parameters

Technical/Catalog Information	IXTT20N50D
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	330 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	2500pF @ 25V
Power - Max	400W
Packaging	Tube
Gate Charge (Qg) @ Vgs	125nC @ 10V
Package / Case	TO-268
FET Feature	Depletion Mode
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTT20N50D IXTT20N50D

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