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IXTT50P10, IXTT52N30P, IXTT64N25P

Table of contents:
Info of IXTT50P10
Info of IXTT52N30P
Info of IXTT64N25P

IXTT50P10, IXTT52N30P, IXTT64N25P Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:TO-268 D/C:`06+(pb-free)

IXTT50P10, IXTT52N30P, IXTT64N25P Picture

IXTT50P10, IXTT52N30P, IXTT64N25P Datasheet download

Five Points

Part Number: IXTT50P10

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-268

D/C: `06+(pb-free)

Description: MOSFET N-CH 250V 64A TO-268

Price Break

Unit Price

4.95467

Extended Price

297.28

(All prices are in USD) Prices for reference only

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IXTT50P10 Parameters

Technical/Catalog Information	IXTT50P10
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	50A
Rds On (Max) @ Id, Vgs	55 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	4200pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	140nC @ 10V
Package / Case	TO-268
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTT50P10 IXTT50P10

IXTT52N30P Parameters

Technical/Catalog Information	IXTT52N30P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	52A
Rds On (Max) @ Id, Vgs	66 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	3490pF @ 25V
Power - Max	400W
Packaging	Tube
Gate Charge (Qg) @ Vgs	110nC @ 10V
Package / Case	TO-268
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTT52N30P IXTT52N30P

IXTT52N30P Features

·International standard packages
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
- easy to drive and to protect

IXTT52N30P Typical Application

􀁺 ·Easy to mount
􀁺 ·Space savings
􀁺 ·High power density

IXTT64N25P Parameters

Technical/Catalog Information	IXTT64N25P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	64A
Rds On (Max) @ Id, Vgs	49 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	3450pF @ 25V
Power - Max	400W
Packaging	Tube
Gate Charge (Qg) @ Vgs	105nC @ 10V
Package / Case	TO-268
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTT64N25P IXTT64N25P

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