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IXTT69N30P, IXTT6N120, IXTT74N20P

Table of contents:
Info of IXTT69N30P
Info of IXTT6N120
Info of IXTT74N20P

IXTT69N30P, IXTT6N120, IXTT74N20P Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:TO-268 D/C:08+/09+

IXTT69N30P, IXTT6N120, IXTT74N20P Picture

IXTT69N30P, IXTT6N120, IXTT74N20P Datasheet download

Five Points

Part Number: IXTT69N30P

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-268

D/C: 08+/09+

Description: MOSFET N-CH 200V 74A TO-268

Price Break

Unit Price

4.02556

Extended Price

362.30

(All prices are in USD) Prices for reference only

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IXTT69N30P Parameters

Technical/Catalog Information	IXTT69N30P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	69A
Rds On (Max) @ Id, Vgs	49 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	4960pF @ 25V
Power - Max	500W
Packaging	Tube
Gate Charge (Qg) @ Vgs	180nC @ 10V
Package / Case	TO-268
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTT69N30P IXTT69N30P

IXTT69N30P Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_CESV_CGR	T_J = 25 to 150 600 T_J= 25 to 150 ; R_GE = 1 M	300 300	V
V_GES V_GEM	Transient	±20 ±30	V V
I_D25 I_DM	T_C = 25 T_C = 25, pulse width limited by TJM	69 200	A A
I_AR E_ARE_AS	T_C = 25 T_C = 25 T_C = 25	69 50 1.5	A mJ J
dv/dt	I_S I_DM, di/dt 100 A/µs, V_DD V_DSS, T_J 150°C, R_G = 4 Ω	10	V/ns
P_D	T_C = 25	500	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
T_L	1.6 mm (0.062 in.) from case for 10 s	300	°C
M_d	Mounting torque (TO-3P)	1.13/10	Nm/lb.in.
Weight	TO-3P TO-268	5.5 5.0	g g

IXTT69N30P Features

· International standard packages
· Unclamped Inductive Switching (UIS) rated
· Low package inductance
- easy to drive and to protect

IXTT69N30P Typical Application

·Easy to mount
·Space savings
·High power density

IXTT6N120 Parameters

Technical/Catalog Information	IXTT6N120
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C	6A
Rds On (Max) @ Id, Vgs	2.6 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	1950pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	56nC @ 10V
Package / Case	TO-268
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTT6N120 IXTT6N120

IXTT6N120 Features

·International standard packages
·Low R_{DS (on)} HDMOS^TM process
·Rugged polysilicon gate cell structure
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
- easy to drive and to protect

IXTT6N120 Typical Application

·Easy to mount
·Space savings
·High power density

IXTT74N20P Parameters

Technical/Catalog Information	IXTT74N20P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	74A
Rds On (Max) @ Id, Vgs	34 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	3300pF @ 25V
Power - Max	480W
Packaging	Tube
Gate Charge (Qg) @ Vgs	107nC @ 10V
Package / Case	TO-268
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTT74N20P IXTT74N20P

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