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IXTU01N100, IXTU01N100D, IXTU01N80

Table of contents:
Info of IXTU01N100
Info of IXTU01N100D
Info of IXTU01N80

IXTU01N100, IXTU01N100D, IXTU01N80 Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:TO-251 D/C:08+/09+

IXTU01N100, IXTU01N100D, IXTU01N80 Picture

IXTU01N100, IXTU01N100D, IXTU01N80 Datasheet download

Five Points

Part Number: IXTU01N100

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-251

D/C: 08+/09+

Description: MOSFET N-CH 800V 0.1A TO-251

Price Break

300

Unit Price

1.23000

Extended Price

369.00

(All prices are in USD) Prices for reference only

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IXTU01N100 Parameters

Technical/Catalog Information	IXTU01N100
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	100mA
Rds On (Max) @ Id, Vgs	80 Ohm @ 100mA, 10V
Input Capacitance (Ciss) @ Vds	54pF @ 25V
Power - Max	25W
Packaging	Tube
Gate Charge (Qg) @ Vgs	6.9nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTU01N100 IXTU01N100

IXTU01N100 Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_CES V_CGR	T_J = 25°C to 150°C T_J= 25°C to 150°C; R_GE = 1 M	1000 1000	V V
V_GES V_GEM	Continuous Transient	±20 ±30	V V
I_D25 I_DM	T_C = 25°C T_C = 25°C, pulse width limited by TJM	100 400	A A
P_D	T_C = 25°C	25	W
T_J T_JMT_stg		-55 ... +150 150 -55 ... +150	°C °C °C
T_L	1.6 mm (0.063 in.) from case for 10 s	300	°C
Weight		0.8	g

IXTU01N100 Features

·International standard packages JEDEC TO-251 AA, TO-252 AA
·Low R_{DS (on)} HDMOS^TM process
·Rugged polysilicon gate cell structure
·Fast switching times

IXTU01N100 Typical Application

·Level shifting
·Triggers
·Solid state relays
·Current regulators

IXTU01N100D Parameters

Technical/Catalog Information	IXTU01N100D
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	100mA
Rds On (Max) @ Id, Vgs	110 Ohm @ 50mA, 0V
Input Capacitance (Ciss) @ Vds	120pF @ 25V
Power - Max	1.1W
Packaging	Tube
Gate Charge (Qg) @ Vgs	-
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Depletion Mode
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTU01N100D IXTU01N100D

IXTU01N100D Maximum Ratings

Symbol	Test Conditions	Max. Ratings
VDSX VDGX	TJ = 25 to 150 TJ = 25 to 150	1000 V 1000 V
VGS VGSM	Continuous Transient	±20 V ±30 V
IDSS IDM	TC = 25; TJ = 25 to 150 TC = 25, pulse width limited by TJ	100 mA 400 mA
PD	TC = 25 T = 25	25 W 1.1 W
TVJ TVJM Tstg		-55 ... +150 150 -55 ... +150
TL TISOL	1.6 mm (0.063 in.) from case for 10 s Plastic case for 10 s (IXTU)	300 300
Md	Mounting torque TO-220	1.3 / 10 Nm/lb.

IXTU01N100D Features

· Normally ON mode
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Fast switching speed

IXTU01N100D Typical Application

· Level shifting
· Triggers
· Solid state relays
· Current regulators

IXTU01N80 Parameters

Technical/Catalog Information	IXTU01N80
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	100mA
Rds On (Max) @ Id, Vgs	50 Ohm @ 100mA, 10V
Input Capacitance (Ciss) @ Vds	60pF @ 25V
Power - Max	25W
Packaging	Tube
Gate Charge (Qg) @ Vgs	8nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTU01N80 IXTU01N80

IXTU01N80 Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
VC_ES V_CGR	T_J = 25°C to 150°C T_J= 25°C to 150°C; R_GE = 1 M	800 800	V V
V_GES V_GEM	Continuous Transient	±20 ±30	V V
I_D25 I_DM	TC = 25°C TC = 25°C, pulse width limited by TJM	100 400	A A
P_D	TC = 25°C	25	W
T_J T_JMT_stg		-55 ... +150 150 -55 ... +150	°C °C °C
TL	1.6 mm (0.063 in.) from case for 10 s	300	°C
Weight		0.8	g

IXTU01N80 Features

·International standard packages JEDEC TO-251 AA, TO-252 AA
·Low R_{DS (on)} HDMOS^TM process
·Rugged polysilicon gate cell structure
·Fast switching times

IXTU01N80 Typical Application

·Level shifting
·Triggers
·Solid state relays
·Current regulators

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