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IXTY01N100, IXTY2N80P, IXUA-NAA

IXTY01N100, IXTY2N80P, IXUA-NAA Selling Leads, Datasheet

MFG:IXYS  Category:Discrete Semiconductor Products  Package Cooled:TO-252AA (D PAK)  D/C:08+/09+

IXTY01N100, IXTY2N80P, IXUA-NAA Picture

IXTY01N100, IXTY2N80P, IXUA-NAA Datasheet download

Five Points

Part Number: IXTY01N100

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-252AA (D PAK)

D/C: 08+/09+

Description: MOSFET N-CH 800V 2A TO-252AA

 

 
 
 
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IXTY01N100 Suppliers

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  • IXTC1088

  • Vendor: ixys D/C: 90+& Qty: DIP Note: new original  Adddate: 2024-04-28
  • Inquire Now
  • HDLBL Components   China
    Contact: Ms.Susan   MSN:susanwang82@live.cn
    Tel: 86-010-13910265534
    Fax: --
    (54)

About IXTY01N100

PDF/DataSheet Download

Datasheet: IXTY01N100

File Size: 67058 KB

Manufacturer: IXYS [IXYS Corporation]

Download : Click here to Download

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IXTY2N80P Suppliers

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  • IXTC1088

  • Vendor: ixys D/C: 90+& Qty: DIP Note: new original  Adddate: 2024-04-28
  • Inquire Now
  • HDLBL Components   China
    Contact: Ms.Susan   MSN:susanwang82@live.cn
    Tel: 86-010-13910265534
    Fax: --
    (54)

About IXTA 3N120

PDF/DataSheet Download

Datasheet: IXTA 3N120

File Size: 576233 KB

Manufacturer:

Download : Click here to Download

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IXUA-NAA Suppliers

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About IXUC120N10

PDF/DataSheet Download

Datasheet: IXUC120N10

File Size: 58062 KB

Manufacturer: IXYS [IXYS Corporation]

Download : Click here to Download

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IXTY01N100 Parameters

Technical/Catalog InformationIXTY01N100
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C100mA
Rds On (Max) @ Id, Vgs80 mOhm @ 100mA, 10V
Input Capacitance (Ciss) @ Vds 54pF @ 25V
Power - Max25W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs6.9nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Drawing Number*
Other Names IXTY01N100
IXTY01N100

IXTY01N100 Maximum Ratings

Symbol Test Conditions Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
1000
1000
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
100
400
A
A
PD TC = 25°C 25 W
TJ
TJM
Tstg
  -55 ... +150
150
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.063 in.) from case for 10 s 300 °C
Weight   0.8 g

IXTY01N100 Features

·International standard packages JEDEC TO-251 AA, TO-252 AA
·Low RDS (on) HDMOSTM process
·Rugged polysilicon gate cell structure
·Fast switching times

IXTY01N100 Typical Application

·Level shifting
·Triggers
·Solid state relays
·Current regulators

IXTY2N80P Parameters

Technical/Catalog InformationIXTY2N80P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C2A
Rds On (Max) @ Id, Vgs6 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 440pF @ 25V
Power - Max70W
PackagingTube
Gate Charge (Qg) @ Vgs10.6nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTY2N80P
IXTY2N80P

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