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IXTY1N80, IXTY1R4N60P, IXTY1R6N50P

IXTY1N80, IXTY1R4N60P, IXTY1R6N50P Selling Leads, Datasheet

MFG:IXYS  Category:Discrete Semiconductor Products  Package Cooled:TO-252AA (D PAK)  D/C:2006

IXTY1R4N60P Picture

IXTY1N80, IXTY1R4N60P, IXTY1R6N50P Datasheet download

Five Points

Part Number: IXTY1R4N60P

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-252AA (D PAK)

D/C: 2006

Description: MOSFET N-CH 500V 1.6A DPAK

Price Break

250

Unit Price

1.14560

Extended Price

286.40

(All prices are in USD) Prices for reference only
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IXTY1N80 Suppliers

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  • IXTC1088

  • Vendor: ixys D/C: 90+& Qty: DIP Note: new original  Adddate: 2024-04-28
  • Inquire Now
  • HDLBL Components   China
    Contact: Ms.Susan   MSN:susanwang82@live.cn
    Tel: 86-010-13910265534
    Fax: --
    (54)

About IXTA 3N120

PDF/DataSheet Download

Datasheet: IXTA 3N120

File Size: 576233 KB

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IXTY1R4N60P Suppliers

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  • IXTC1088

  • Vendor: ixys D/C: 90+& Qty: DIP Note: new original  Adddate: 2024-04-28
  • Inquire Now
  • HDLBL Components   China
    Contact: Ms.Susan   MSN:susanwang82@live.cn
    Tel: 86-010-13910265534
    Fax: --
    (54)

About IXTA 3N120

PDF/DataSheet Download

Datasheet: IXTA 3N120

File Size: 576233 KB

Manufacturer:

Download : Click here to Download

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IXTY1R6N50P Suppliers

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  • IXTC1088

  • Vendor: ixys D/C: 90+& Qty: DIP Note: new original  Adddate: 2024-04-28
  • Inquire Now
  • HDLBL Components   China
    Contact: Ms.Susan   MSN:susanwang82@live.cn
    Tel: 86-010-13910265534
    Fax: --
    (54)

About IXTY1R6N50P

PDF/DataSheet Download

Datasheet: IXTY1R6N50P

File Size: 122398 KB

Manufacturer: IXYS [IXYS Corporation]

Download : Click here to Download

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IXTY1N80 Parameters

Technical/Catalog InformationIXTY1N80
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C750mA
Rds On (Max) @ Id, Vgs11 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 220pf @ 25V
Power - Max40W
PackagingBulk
Gate Charge (Qg) @ Vgs8.5nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTY1N80
IXTY1N80

IXTY1N80 Maximum Ratings

Symbol Test Conditions Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°CV
TJ = 25°C to 150°C; RGS = 1 M
800
800
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
750
3
mA
mA
IAR
EAR
EAS
TC = 25°C
TC = 25°C
1.0
5
100
A
mJ
mJ
dv/dt
IS IDM, di/dt 100 A/s, VDD VDSS,
TJ 150°C, RG = 47
3 V/ns
PD TC = 25°C 40 W
TJ
TJM
  -55 ... +150 150
Tstg -55 ... +150
°C
°C
°C

IXTY1R4N60P Parameters

Technical/Catalog InformationIXTY1R4N60P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C1.4A
Rds On (Max) @ Id, Vgs9 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 140pF @ 25V
Power - Max50W
PackagingTube
Gate Charge (Qg) @ Vgs5.2nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTY1R4N60P
IXTY1R4N60P

IXTY1R6N50P Parameters

Technical/Catalog InformationIXTY1R6N50P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C1.6A
Rds On (Max) @ Id, Vgs6.5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 140pF @ 25V
Power - Max43W
PackagingTube
Gate Charge (Qg) @ Vgs3.9nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTY1R6N50P
IXTY1R6N50P

IXTY1R6N50P Maximum Ratings

Symbol Test Conditions Maximum Ratings
VDSS
VDGR
TJ = 25 to 150
TJ = 25 to 150; RGS = 1 MΩ
500
500
V
V
VGS
VGSM
Continuous
Transient
±30
±40
V
V
ID25
IDM
TC = 25
TC = 25, pulse width limited by TJM
1.6
2.5
A
A
IAR
EAR
EAS
TC = 25
TC = 25
TC = 25
1.6
5
75
A
mJ
mJ
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150, RG = 50 Ω
10 V/ns
PD TC = 25 43 W
TJ
TJM
Tstg
  -55 ... +150
150
-55 ... +150


TL 1.6 mm (0.062 in.) from case for 10s
Maximum tab temperature for soldering
TO-252 package for 10s
300
260

Md Mounting torque (TO-220) 1.13/10 Nm/lb.in.
Weight TO-252
TO-220
0.8
4
g
g

IXTY1R6N50P Features

·International standard packages
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
  - easy to drive and to protect

IXTY1R6N50P Typical Application

·Easy to mount
·Space savings
·High power density

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