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The MCT2XXX series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
MCT2ESR2M Maximum Ratings
Parameter
Symbo
Device
Value
Units
TOTAL DEVICE Storage Temperature
TSTG
ALL
-55 to +150
°C
Operating Temperature
TOPR
ALL
-55 to +100
°C
Lead Solder Temperature
TSOL
ALL
260 for 10 sec
°C
Total Device Power Dissipation @ TA = 25°C
PD
-M
250
mW
Non-M
260
-M
2.94
mW/°C
Derate above 25°C
Non-M
3.3
EMITTER DC/Average Forward Input Current
IF
-M
60
mA
Non-M
100
Reverse Input Voltage
VR
ALL
3
V
Forward Current - Peak (300s, 2% Duty Cycle)
IF (pk)
ALL
3
A
LED Power Dissipation @ TA = 25°C
PD
-M
120
mW
Non-M
150
Derate above 25°C
-M
1.41
mW/°C
Non-M
2.0
DETECTOR Collector Current
IC
ALL
50
mA
Collector-Emitter Voltage
VCEO
ALL
30
V
Detector Power Dissipation @ TA = 25°C
PD
ALL
150
mW
-M
1.76
mW/°C
Derate above 25°C
Non-M
2.0
MCT2ESR2M Features
UL recognized (File # E90700) VDE recognized (File # 94766) Add option V for white package (e.g., MCT2V-M) Add option 300 for black package (e.g., MCT2.300) MCT2 and MCT2E are also available in white package by specifying -M suffix, eg. MCT2-M
MCT2ESR2M Typical Application
Power supply regulators Digital logic inputs Microprocessor inputs