MTP12N10E, MTP12N10L, MTP12N18 Selling Leads, Datasheet
MFG:MOT/ON Package Cooled:MOT D/C:TO
MTP12N10E, MTP12N10L, MTP12N18 Datasheet download
Part Number: MTP12N10E
MFG: MOT/ON
Package Cooled: MOT
D/C: TO
MTP12N10E, MTP12N10L, MTP12N18
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Info of MTP12N10E
Info of MTP12N10L
Info of MTP12N18
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About MTP12N10E
PDF/DataSheet Download
Datasheet: MTP12N10E
File Size: 245482 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MTP 3-Phase Rectifier Series
PDF/DataSheet Download
Datasheet: MTP 3-Phase Rectifier Series
File Size: 124897 KB
Manufacturer:
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About MTP12N18
PDF/DataSheet Download
Datasheet: MTP12N18
File Size: 181393 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
MTP12N10E General Description
This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTP12N10E Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
100 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
100 |
Vdc |
| GatetoSource Voltage - Continuous - Single Pulsed (tp 50 ms) |
VGS VGSM |
±20 ±40 |
Vdc Vpk |
| Drain Current - Continuous -Single Pulsed (tp 10 s) |
ID IDM |
12 30 |
Adc |
| Total Power Dissipation @ TC= 25°C Derate above 25°C |
PD |
79 0.53 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 175 |
°C |
MTP12N10E Features
• Designed to Eliminate the Need for External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode
• Commutating Safe Operating Area (CSOA) Specified for Use in Half and Full Bridge Circuits
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Commutating Safe Operating Area (CSOA) Specified for Use in Half and Full Bridge Circuits
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
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