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MTP10N10, MTP10N10E, MTP10N10EL

Table of contents:
Info of MTP10N10
Info of MTP10N10E
Info of MTP10N10EL

MTP10N10, MTP10N10E, MTP10N10EL Selling Leads, Datasheet

MFG:ON Package Cooled:9800 D/C:TO

MTP10N10, MTP10N10E, MTP10N10EL Datasheet download

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Part Number: MTP10N10

MFG: ON

Package Cooled: 9800

D/C: TO

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MTP10N10E General Description

This advanced "E" series of TMOS power MOSFETs is designed to withstand high energy in the avalanche and commutation modes. These new energy efficient devices also offer drainto source diodes with fast recovery times. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical, and offer additional safety margin against unexpected voltage transients.

MTP10N10E Maximum Ratings

Rating	Symbol	Value	Unit
DraintoSource Voltage	V_DSS	100	Vdc
DraintoGate Voltage (R_GS = 1.0 M)	V_DGR	100	Vdc
GatetoSource Voltage	V_GS	± 20	Vdc
Drain Current - Continuous - Pulsed	I_D I_DM	10 5	Adc
Total Power Dissipation Derate above 25°C	P_D	75 0.6	Watts W/°C
Operating and Storage Temperature Range	T_J, T_stg	65 to 150	°C

MTP10N10E Features

• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode - Unclamped Inductive Switching (UIS) Energy Capability Specified at 100°C
• Commutating Safe Operating Area (CSOA) Specified for Use in Half and Full Bridge Circuits
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits

MTP10N10EL General Description

This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTP10N10EL Maximum Ratings

Rating	Symbol	Value	Unit
DraintoSource Voltage	V_DSS	100	Vdc
DraintoGate Voltage (R_GS =1.0 M)	V_DGR	100	Vdc
GatetoSource Voltage - Continuous - NonRepetitive (t_p 10 ms)	V_GS V_GSM	±15 ±20	Vdc VPK
Drain Current - Continuous@ T_C = 25°C - Continuous@ 100°C - Single Pulse (t_p 10 s)	I_D I_D I_DM	10 6.0 35	Adc Apk
Total Power Dissipation @ T_C = 25°C Derate above 25°C	P_D	40 0.32 1.75	Watts W/°C
Operating and Storage Temperature Range	T_J, T_stg	55 to 150	°C
Single Pulse DraintoSource Avalanche Energy T_J = 25°C (V_DD =25 Vdc, V_GS =5.0Vdc I_L =10 Apk L =1.0mH, R_G = 25	E_AS	50	mJ
Thermal Resistance - Junction to Case - Junction to Ambient⁽¹⁾	R_JC R_JA R_JA	3.13 100 71.4	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	T_L	260	°C

(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

MTP10N10EL Features

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature

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