MTP12P10, MTP12P10G, MTP1302 Selling Leads, Datasheet
MFG:ON Package Cooled:TO-220 D/C:00+
MTP12P10, MTP12P10G, MTP1302 Datasheet download
Part Number: MTP12P10
MFG: ON
Package Cooled: TO-220
D/C: 00+
MTP12P10, MTP12P10G, MTP1302
- Table of contents:
Info of MTP12P10
Info of MTP12P10G
Info of MTP1302
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About MTP12P10
PDF/DataSheet Download
Datasheet: MTP12P10
File Size: 174015 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MTP 3-Phase Rectifier Series
PDF/DataSheet Download
Datasheet: MTP 3-Phase Rectifier Series
File Size: 124897 KB
Manufacturer:
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About MTP1302
PDF/DataSheet Download
Datasheet: MTP1302
File Size: 170703 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
MTP12P10 General Description
This TMOS Power FET is designed for medium voltage, high speed power switching applications such as switching regulators,converters, solenoid and relay drivers.• Silicon Gate for Fast Switching Speeds - Switching Times Specified at 100°C
• Designer's Data - IDSS, VDS(on), VGS(th) and SOA Specified at Elevated Temperature
• Rugged - SOA is Power Dissipation Limited
• SourcetoDrain Diode Characterized for Use With Inductive Loads
MTP12P10 Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
100 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
100 |
Vdc |
| GateSource Voltage - Continuous - Nonrepetitive(tp 50 s) |
VGS VGSM |
±20 ±40 |
Vdc Vpk |
| Drain Current - Continuous Drain Current - Pulsed |
ID IDM |
12 28 |
Adc |
| Total Power Dissipation Derate above 25°C |
PD |
75 0.6 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ,Tstg |
65 to 150 |
°C |
MTP1302 General Description
This advanced high cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients.
MTP1302 Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
30 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
30 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 20 ± 20 |
Vdc VPK |
| Drain Current - Continuous - Continuous@ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
42 20 126 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
74 0.592 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =25 Vdc, VGS = 10Vdc, PEAK IL =42Apk, L =0.25mH, RG = 25) |
EAS |
220 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
1.67 62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
EFET and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
MTP1302 Features
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode Is Characterized for Use In Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode Is Characterized for Use In Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
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