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MTP1306, MTP140XFCLP, MTP150S8-16

Table of contents:
Info of MTP1306
Info of MTP140XFCLP
Info of MTP150S8-16

MTP1306, MTP140XFCLP, MTP150S8-16 Selling Leads, Datasheet

MFG:MOT/ON Package Cooled:TO-220 D/C:02+

MTP1306, MTP140XFCLP, MTP150S8-16 Picture

MTP1306, MTP140XFCLP, MTP150S8-16 Datasheet download

Five Points

Part Number: MTP1306

MFG: MOT/ON

Package Cooled: TO-220

D/C: 02+

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MTP1306 General Description

This advanced highcell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients.

MTP1306 Maximum Ratings

Rating	Symbol	Value	Unit
DraintoSource Voltage	V_DSS	300	Vdc
DraintoGate Voltage (R_GS = 1.0 M)	V_DGR	300	Vdc
GatetoSource Voltage - Continuous - NonRepetitive (t_p 10 ms)	V_GS VGSM	± 20 ± 20	Vdc Vpk
Drain Current - Continuous - Continuous @ @TC=100°C - Single Pulse (t_p 10 s)	I_D I_D I_DM	75 59 225	Adc Apk
Total Power Dissipation Derate above 25°C	P_D	150 1.2	Watts W/°C
Operating and Storage Temperature Range	T_J, T_stg	55 to 175	°C
Single Pulse DraintoSource Avalanche Energy T_J = 25°C (V_DD =25Vdc,V_GS = 10Vdc, Vdc,Peak I_L =75Apk, L = 0.1mH, R_G = 25)	E_AS	280	mJ
Thermal Resistance - Junction to Case - Junction to Ambient	R_JC R_JA	0.8 62.5	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	T_L	260	°C

This document contains information on a new product. Specifications and information herein are subject to change without notice.
EFET and HDTMOS are trademarks of Motorola, Inc.

MTP1306 Features

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature

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