MTP1N50, MTP1N50E, MTP1N55 Selling Leads, Datasheet
MFG:ON Package Cooled:TO-220 D/C:06+
MTP1N50, MTP1N50E, MTP1N55 Datasheet download
Part Number: MTP1N50
MFG: ON
Package Cooled: TO-220
D/C: 06+
MTP1N50, MTP1N50E, MTP1N55
- Table of contents:
Info of MTP1N50
Info of MTP1N50E
Info of MTP1N55
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About MTP1N50E
PDF/DataSheet Download
Datasheet: MTP1N50E
File Size: 163088 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MTP1N50E
PDF/DataSheet Download
Datasheet: MTP1N50E
File Size: 163088 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MTP 3-Phase Rectifier Series
PDF/DataSheet Download
Datasheet: MTP 3-Phase Rectifier Series
File Size: 124897 KB
Manufacturer:
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MTP1N50E General Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTP1N50E Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
500 |
Vdc |
| DraintoGate Voltage (RGS =1.0 M) |
VDGR |
500 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 20 ± 40 |
Vdc VPK |
| Drain Current - Continuous - Continuous@ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
1.0 0.8 3.0 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
40 0.32 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =100 Vdc, VGS =10Vdc IL =3.0 Apk L =10mH, RG = 25 |
EAS |
45 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient, when surface mounted using minimum recommended pad size |
RJC RJA |
3.13 62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
MTP1N50E Features
• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
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