MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:08+
MTP20N15E, MTP20N20, MTP20N20E Datasheet download
Category: Discrete Semiconductor Products
MFG: ON Semiconductor
Package Cooled: TO-220
D/C: 08+
Description: MOSFET N-CH 150V 20A TO-220AB
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PDF/DataSheet Download
Datasheet: MTP20N15E
File Size: 36866 KB
Manufacturer: ON SEMICONDUCTOR
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MTP20N20
File Size: 207966 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MTP20N20E
File Size: 207966 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
| Technical/Catalog Information | MTP20N15E |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Rds On (Max) @ Id, Vgs | 130 mOhm @ 10A, 10V |
| Input Capacitance (Ciss) @ Vds | 1627pF @ 25V |
| Power - Max | 112W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 55.9nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MTP20N15E MTP20N15E |
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
|
Rating |
Symbol |
Value |
Unit |
|
DrainSource Voltage |
VDSS |
150 |
Vdc |
|
DrainGate Voltage (RGS = 1.0 MW) |
VDGR |
150 |
Vdc |
|
GateSource Voltage |
VGS |
± 20 |
Vdc |
|
Drain Continuous |
ID |
20 |
Adc |
|
Total Power Dissipation |
PD |
112 |
Watts |
|
Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
|
Single DraintoSource Avalanche Energy |
EAS |
60 |
mJ |
|
Thermal Resistance |
RqJC |
1.1 |
°C/W |
|
Maximum Lead Temperature for Soldering |
TL |
260 |
°C |
This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
200 |
Vdc |
| DraintoGate Voltage (RGS =1.0 M) |
VDGR |
200 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 20 ± 40 |
Vdc VPK |
| Drain Current - Continuous - Continuous@ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
20 12 60 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
125 1.0 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =50 Vdc, VGS =10Vdc,IL =20 Apk L =3.0mH, RG = 2.0 |
EAS |
600 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
1.00 62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
|
Rating |
Symbol |
Value |
Unit |
| DrainSource Voltage |
VGSS |
200 |
Vdc |
| DrainGate Voltage (RGS = 1.0 M) |
VDGR |
200 |
Vdc |
| GateSource Voltage - Continuous - NonRepetitive (tp10ms) |
VGS VGSM |
±20 ±4 |
|
| Drain - Continuous - Continuous @ 100°C - Single Pulse(tp10 s) |
ID ID IDM |
20 12 60 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
125 1.06 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ,Tstg |
55 to 150 |
°C |
| Single DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 20 Apk, L = 3.0 mH, RG = 25) |
EAS |
600 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
1.00 62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds |
TL |
260 |
°C |
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