MTP2N60E, MTP2N60E/D, MTP2N85 Selling Leads, Datasheet
MFG:MOTOROLA Package Cooled:MOT D/C:08+
MTP2N60E, MTP2N60E/D, MTP2N85 Datasheet download
Part Number: MTP2N60E
MFG: MOTOROLA
Package Cooled: MOT
D/C: 08+
MTP2N60E, MTP2N60E/D, MTP2N85
- Table of contents:
Info of MTP2N60E
Info of MTP2N60E/D
Info of MTP2N85
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About MTP2N60E
PDF/DataSheet Download
Datasheet: MTP2N60E
File Size: 224775 KB
Manufacturer: MOTOROLA [Motorola, Inc]
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About MTP2N60E/D
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Datasheet: MTP2N60E/D
File Size: 194717 KB
Manufacturer:
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About MTP 3-Phase Rectifier Series
PDF/DataSheet Download
Datasheet: MTP 3-Phase Rectifier Series
File Size: 124897 KB
Manufacturer:
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MTP2N60E General Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies,converters and PWM motor controls, these devices are particularly well suite for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
MTP2N60E Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DrainSource Voltage |
VGSS |
600 |
Vdc |
| DrainGate Voltage (RGS = 1.0 M) |
VDGR |
600 |
Vdc |
| GateSource Voltage - Continuous - Single Pulse (tp50 s) |
VGS VGSM |
±20 ±40 |
|
| Drain - Continuous - Single Pulse(tp10 s) |
ID IDM |
2.0 9.0 |
Adc |
| Total Power Dissipation Derate above 25°C |
PD |
50 0.4 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ,Tstg |
55 to 150 |
°C |
| Single DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, L = 95 mH, RG = 25 , Peak IL = 2.0 Adc) |
EAS |
190 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
2.5 62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds |
TL |
260 |
°C |
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