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MTP3055EJM, MTP3055V_NL, MTP3055VL

Table of contents:
Info of MTP3055EJM
Info of MTP3055V_NL
Info of MTP3055VL

MTP3055EJM, MTP3055V_NL, MTP3055VL Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:08+/09+

MTP3055EJM, MTP3055V_NL, MTP3055VL Datasheet download

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Part Number: MTP3055VL

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220

D/C: 08+/09+

Description: MOSFET N-CHAN 60V 12A TO-220

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MTP3055VL Parameters

Technical/Catalog Information	MTP3055VL
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	180 mOhm @ 6A, 5V
Input Capacitance (Ciss) @ Vds	570pF @ 25V
Power - Max	48W
Packaging	Tube
Gate Charge (Qg) @ Vgs	10nC @ 5V
Package / Case	TO-220
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MTP3055VL MTP3055VL MTP3055VLFS ND MTP3055VLFSND MTP3055VLFS

MTP3055VL General Description

TMOS V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTP3055VL Maximum Ratings

Rating	Symbol	Value	Unit
DraintoSource Voltage	V_DSS	60	Vdc
DraintoGate Voltage (R_GS = 1.0 M)	V_DGR	60	Vdc
GatetoSource Voltage - Continuous - NonRepetitive (t_p 50 ms)	V_GS VGSM	±15 ± 20	Vdc Vpk
Drain Current - Continuous @ 25°C - Continuous @ 100°C - Single Pulse (t_p 10 s)	I_D I_D I_DM	12 8.0 42	Adc
Total Power Dissipation@ 25°C Derate above 25°C	P_D	48 0.32	Watts W/°C
Operating and Storage Temperature Range	T_J, T_stg	55 to 175	°C
Single Pulse DraintoSource Avalanche Energy T_J = 25°C (V_DD =25 Vdc, V_GS = 5.0Vdc, PEAK I_L =12Apk, L = 1.0mH, R_G = 25)	E_AS	72	mJ
Thermal Resistance - Junction to Case - Junction to Ambient	R_JC R_JA	3.13 62.5	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	T_L	260	°C

Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET, Designer's and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

MTP3055VL Features

• Avalanche Energy Specified
• I_DSSand V_DS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET

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