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MTP30P06, MTP30P06V, MTP33N

MTP30P06, MTP30P06V, MTP33N Selling Leads, Datasheet

MFG:IR  Package Cooled:TO-220  D/C:08+/09+

MTP30P06, MTP30P06V, MTP33N Picture

MTP30P06, MTP30P06V, MTP33N Datasheet download

Five Points

Part Number: MTP30P06

 

MFG: IR

Package Cooled: TO-220

D/C: 08+/09+

 

 

 
 
 
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  • MTP30P06V

  • Pack: TO Qty: 5000  Adddate: 2024-03-29
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  • Abenic   China
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  • MTP10N05

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  • MTP10N06

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  • MTP10N06E

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  • MTP10N10

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  • MTP10N10E

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About MTP30P06

PDF/DataSheet Download

Datasheet: MTP30P06

File Size: 195585 KB

Manufacturer: MOTOROLA [Motorola, Inc]

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MTP30P06V Suppliers

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  • MTP30P06V

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  • MTP10N05

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  • MTP10N06

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  • MTP10N06E

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  • MTP10N08

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  • MTP10N10

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  • MTP10N10E

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About MTP30P06V

PDF/DataSheet Download

Datasheet: MTP30P06V

File Size: 195585 KB

Manufacturer: MOTOROLA [Motorola, Inc]

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MTP33N Suppliers

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  • MTP33N10E

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  • MTP10N05

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  • MTP10N06

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  • MTP10N06E

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  • Abenic   China
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  • MTP10N08

  • Pack: TO Qty: 5000  Adddate: 2024-03-29
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  • Abenic   China
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    Tel: 86-755-83019622
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  • MTP10N10

  • Pack: TO Qty: 5000  Adddate: 2024-03-29
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  • Abenic   China
    Contact: Mr.Wong   MSN:abenic8@hotmail.com
    Tel: 86-755-83019622
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  • MTP10N10E

  • Pack: TO Qty: 5000  Adddate: 2024-03-29
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  • Abenic   China
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About MTP33N10

PDF/DataSheet Download

Datasheet: MTP33N10

File Size: 246166 KB

Manufacturer: MOTOROLA [Motorola, Inc]

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MTP30P06 General Description

TMOS V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTP30P06 Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
60
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
GatetoSource Voltage
- Continuous
- NonRepetitive (tp 10 ms)
VGS
VGSM
± 15
± 25
Vdc
VPK
Drain Current
- Continuous @ 25°C
- Continuous@ 100°C
- Single Pulse (tp 10 s)
ID
ID
IDM
30
19
105
Adc

Apk
Total Power Dissipation
Derate above 25°C
PD
125
0.83
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 175
°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C
(VDD =25 Vdc, VGS = 10Vdc, PEAK IL =30Apk, L = 1.0mH, RG = 25)
EAS
450
mJ
Thermal Resistance
- Junction to Case
- Junction to Ambient
RJC
RJA
1.2
62.5
°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds
TL
260
°C
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

EFET, Designer's and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

MTP30P06 Features

• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET

MTP30P06V Maximum Ratings

Rating
Symbol
Value
Unit
DrainSource Voltage
VGSS
60
Vdc
DrainGate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
GateSource Voltage
- Continuous
- NonRepetitive (tp10ms)

VGS
VGSM

±15
±25


Vdc
Vpk

Drain - Continuous
- Continuous @ 100°C
- Single Pulse(tp10 s)
ID
ID
IDM
30
19
105

Adc

Apk

Total Power Dissipation
Derate above 25°C
PD
125
0.83
Watts
W/°C
Operating and Storage Temperature Range
TJ,Tstg
55 to 150
°C
Single DraintoSource Avalanche
Energy - Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, IL =30 Apk, L = 1.0 mH, RG = 25)
EAS
450
mJ
Thermal Resistance - Junction to Case
- Junction to Ambient
RJC
RJA
1.2
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8" from case for 10 seconds
TL
260
°C

MTP30P06V Features

New Features of TMOS V
• Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
• Faster Switching than EFET Predecessors
Features Common to TMOS V and TMOS EFETS
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET

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