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MTP3N120E, MTP3N25E, MTP3N35

Table of contents:
Info of MTP3N120E
Info of MTP3N25E
Info of MTP3N35

MTP3N120E, MTP3N25E, MTP3N35 Selling Leads, Datasheet

MFG:ON Package Cooled:ON/MOT D/C:03+

MTP3N120E, MTP3N25E, MTP3N35 Datasheet download

Five Points

Part Number: MTP3N120E

MFG: ON

Package Cooled: ON/MOT

D/C: 03+

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MTP3N120E General Description

This advanced highvoltage TMOS EFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls, and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

MTP3N120E Maximum Ratings

Rating	Symbol	Value	Unit
DraintoSource Voltage	V_DSS	1200	Vdc
DraintoGate Voltage (R_GS = 1.0 M)	V_DGR	1200	Vdc
GatetoSource Voltage - Continuous - Nonrepetitive (t_p 50 ms)	V_GS V_GSM	± 20 ±40	Vdc Vpk
Drain Current - Continuous @ 25°C - Continuous @ 100°C - Single Pulsed (t_p 10 s)	I_D I_D I_DM	3.0 2.2 11	Adc Apk
Total Power Dissipation Derate above 25°C	P_D	125 1.0	Watts W/°C
Operating and Storage Temperature Range	T_J, T_stg	55 to 150	°C

MTP3N120E Features

• Avalanche Energy Capability Specified at Elevated Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor Absorbs High Energy in the Avalanche Mode
• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
* See App. Note AN1327 - Very Wide Input Voltage Range; Offline Flyback Switching Power Supply

MTP3N25E General Description

This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTP3N25E Maximum Ratings

Rating	Symbol	Value	Unit
DraintoSource Voltage	V_DSS	250	Vdc
DraintoGate Voltage (R_GS =1.0 M)	V_DGR	250	Vdc
GatetoSource Voltage - Continuous - NonRepetitive (t_p 10 ms)	V_GS V_GSM	± 20 ± 40	Vdc VPK
Drain Current - Continuous - Continuous@ 100°C - Single Pulse (t_p 10 s)	I_D I_D I_DM	3.0 2.0 9.0	Adc Apk
Total Power Dissipation Derate above 25°C	P_D	40 0.32	Watts W/°C
Operating and Storage Temperature Range	T_J, T_stg	55 to 150	°C
Single Pulse DraintoSource Avalanche Energy T_J = 25°C (V_DD =25 Vdc, V_GS =10Vdc I_L =3.0 Apk L =1.0mH, R_G = 25	E_AS	45	mJ
Thermal Resistance - Junction to Case - Junction to Ambient	R_JC R_JA	3.13 62.5	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	T_L	260	°C

Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

MTP3N25E Features

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSSand V_DS(on) Specified at Elevated Temperature

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