MTP3N60E, MTP3N60FI, MTP3N75 Selling Leads, Datasheet
MFG:MOT/ON Package Cooled:MOT D/C:dc95
MTP3N60E, MTP3N60FI, MTP3N75 Datasheet download
Part Number: MTP3N60E
MFG: MOT/ON
Package Cooled: MOT
D/C: dc95
MTP3N60E, MTP3N60FI, MTP3N75
- Table of contents:
Info of MTP3N60E
Info of MTP3N60FI
Info of MTP3N75
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About MTP3N60E
PDF/DataSheet Download
Datasheet: MTP3N60E
File Size: 188278 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MTP3N60FI
PDF/DataSheet Download
Datasheet: MTP3N60FI
File Size: 205220 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About MTP 3-Phase Rectifier Series
PDF/DataSheet Download
Datasheet: MTP 3-Phase Rectifier Series
File Size: 124897 KB
Manufacturer:
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MTP3N60E General Description
This advanced high voltage TMOS EFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
MTP3N60E Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
600 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
600 |
Vdc |
| GatetoSource Voltage - Continuous - Nonrepetitive |
VGS VGSM |
± 20 ±40 |
Vdc Vpk |
| Drain Current - Continuous @ 100°C - Pulsed |
ID ID IDM |
3.0 2.4 14 |
Adc |
| Total Power Dissipation @ TC = 25°C Derate above 25°C |
PD |
75 0.6 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
MTP3N60E Features
• Avalanche Energy Capability Specified at Elevated Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode
• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode
• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
MTP3N60FI Maximum Ratings
|
Symbol |
Rating |
Value |
Unit | |
|
MTP3N60 |
MTP3N60FI | |||
|
VDSS |
Drain-source Voltage (VGS = 0) |
600 |
V | |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
600 |
V | |
|
VGS |
Gate-source Voltage |
± 20 |
V | |
|
ID |
Drain Current (continuous) at Tc = 25 |
3.9 |
2.5 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
2.4 |
1.5 |
A |
|
IDM(`) |
Drain Current (pulsed) |
14 |
14 |
A |
|
Ptot |
Total Dissipation at Tc = 25°C |
100 |
35 |
W |
| Derating Factor |
0.8 |
0.28 |
W/oC | |
|
VISO |
Insulation Withstand Voltage (DC) |
- |
2000 |
V |
|
Tstg |
Storage Temperature |
-65 to 150 |
°C | |
|
Tj |
Max. Operating Junction Temperature |
150 |
°C | |
MTP3N60FI Features
`TYPICAL RDS(on) = 2
` AVALANCHE RUGGED TECHNOLOGY
` 100% AVALANCHE TESTED
` REPETITIVE AVALANCHE DATA AT 100oC
` APPLICATION ORIENTED CHARACTERIZATION
` AVALANCHE RUGGED TECHNOLOGY
` 100% AVALANCHE TESTED
` REPETITIVE AVALANCHE DATA AT 100oC
` APPLICATION ORIENTED CHARACTERIZATION
MTP3N60FI Typical Application
·HIGH CURRENT, HIGH SPEED SWITCHING
·SWITCH MODE POWERSUPPLIES (SMPS)
·CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT
·SWITCH MODE POWERSUPPLIES (SMPS)
·CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT
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