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MTP40N10E, MTP42N03, MTP45N03

Table of contents:
Info of MTP40N10E
Info of MTP42N03
Info of MTP45N03

MTP40N10E, MTP42N03, MTP45N03 Selling Leads, Datasheet

MFG:ON Package Cooled:9800 D/C:TO

MTP40N10E, MTP42N03, MTP45N03 Datasheet download

Five Points

Part Number: MTP40N10E

MFG: ON

Package Cooled: 9800

D/C: TO

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MTP40N10E General Description

This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTP40N10E Maximum Ratings

Rating	Symbol	Value	Unit
DraintoSource Voltage	V_DSS	100	Vdc
DraintoGate Voltage (R_GS = 1.0 M)	V_DGR	100	Vdc
GatetoSource Voltage - Continuous - NonRepetitive (t_p 10 ms)	V_GS V_GSM	± 20 ± 40	Vdc VPK
Drain Current - Continuous - Continuous@ 100°C - Single Pulse (t_p 10 s)	I_D I_D I_DM	40 29 140	Adc Apk
Total Power Dissipation Derate above 25°C	P_D	169 1.35	Watts W/°C
Operating and Storage Temperature Range	T_J, T_stg	55 to 150	°C
Single Pulse DraintoSource Avalanche Energy T_J = 25°C (V_DD =75 Vdc, V_GS = 10Vdc, PEAK I_L =40Apk, L =1.0mH, R_G = 25)	E_AS	800	mJ
Thermal Resistance - Junction to Case - Junction to Ambient	R_JC R_JA	0.74 62.5	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	T_L	260	°C

This document contains information on a new product. Specifications and information herein are subject to change without notice.
EFET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

MTP40N10E Features

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSSand V_DS(on) Specified at Elevated Temperature

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