MTP4N50E, MTP4N60, MTP4N60E/D Selling Leads, Datasheet
MFG:ON Package Cooled:TO-220 D/C:TO
MTP4N50E, MTP4N60, MTP4N60E/D Datasheet download
Part Number: MTP4N50E
MFG: ON
Package Cooled: TO-220
D/C: TO
MTP4N50E, MTP4N60, MTP4N60E/D
- Table of contents:
Info of MTP4N50E
Info of MTP4N60
Info of MTP4N60E/D
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About MTP4N50E
PDF/DataSheet Download
Datasheet: MTP4N50E
File Size: 260727 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MTP 3-Phase Rectifier Series
PDF/DataSheet Download
Datasheet: MTP 3-Phase Rectifier Series
File Size: 124897 KB
Manufacturer:
Download : Click here to Download
About MTP 3-Phase Rectifier Series
PDF/DataSheet Download
Datasheet: MTP 3-Phase Rectifier Series
File Size: 124897 KB
Manufacturer:
Download : Click here to Download
MTP4N50E General Description
This advanced high voltage TMOS EFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
MTP4N50E Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
500 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
500 |
Vdc |
| GatetoSource Voltage - Continuous - Nonrepetitive |
VGS VGSM |
± 20 ±40 |
Vdc Vpk |
| Drain Current - Continuous - Pulsed |
ID IDM |
4.0 10 |
Adc |
| Total Power Dissipation @ TC = 25°C Derate above 25°C |
PD |
75 0.6 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
MTP4N50E Features
• Avalanche Energy Capability Specified at Elevated Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode
• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode
• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
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