MTP50N05E, MTP50N05EL, MTP50N06 Selling Leads, Datasheet
MFG:MOT Package Cooled:TO-220 D/C:05+
MTP50N05E, MTP50N05EL, MTP50N06 Datasheet download
Part Number: MTP50N05E
MFG: MOT
Package Cooled: TO-220
D/C: 05+
MTP50N05E, MTP50N05EL, MTP50N06
- Table of contents:
Info of MTP50N05E
Info of MTP50N05EL
Info of MTP50N06
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About MTP 3-Phase Rectifier Series
PDF/DataSheet Download
Datasheet: MTP 3-Phase Rectifier Series
File Size: 124897 KB
Manufacturer:
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About MTP 3-Phase Rectifier Series
PDF/DataSheet Download
Datasheet: MTP 3-Phase Rectifier Series
File Size: 124897 KB
Manufacturer:
Download : Click here to Download
About MTP50N06
PDF/DataSheet Download
Datasheet: MTP50N06
File Size: 200453 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
MTP50N06 General Description
TMOS V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTP50N06 Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
60 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 15 ± 20 |
Vdc VPK |
| Drain Current - Continuous @ 25°C - Continuous@ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
42 30 147 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
125 0.83 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 175 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =25 Vdc, VGS = 5Vdc, PEAK IL =42Apk, L =0.3mH, RG = 25) |
EAS |
265 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
1.2 62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET, Designer's and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
MTP50N06 Features
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET
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