MTP50N06EL, MTP50N06V, MTP50N06VL Selling Leads, Datasheet
MFG:MOT/ON Package Cooled:MOT D/C:TO
MTP50N06EL, MTP50N06V, MTP50N06VL Datasheet download
Part Number: MTP50N06EL
MFG: MOT/ON
Package Cooled: MOT
D/C: TO
MTP50N06EL, MTP50N06V, MTP50N06VL
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Info of MTP50N06EL
Info of MTP50N06V
Info of MTP50N06VL
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About MTP50N06EL
PDF/DataSheet Download
Datasheet: MTP50N06EL
File Size: 238055 KB
Manufacturer: MOTOROLA [Motorola, Inc]
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About MTP50N06V
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Datasheet: MTP50N06V
File Size: 183833 KB
Manufacturer: MOTOROLA [Motorola, Inc]
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About MTP50N06VL
PDF/DataSheet Download
Datasheet: MTP50N06VL
File Size: 200453 KB
Manufacturer: MOTOROLA [Motorola, Inc]
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MTP50N06EL General Description
This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTP50N06EL Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
60 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 15 ± 30 |
Vdc VPK |
| Drain Current - Continuous - Continuous@ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
50 38 160 |
Adc Apk |
| Total Power Dissipation TC = 25°C Derate above 25°C |
PD |
150 1.0 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 175 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =25 Vdc, VGS = 5.0Vdc, PEAK IL =50 Apk, L =0.32H, RG = 25) |
EAS |
100 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
1.0 62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
MTP50N06EL Features
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
MTP50N06V General Description
TMOS V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTP50N06V Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
60 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 20 ± 25 |
Vdc VPK |
| Drain Current - Continuous @ 25°C - Continuous@ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
42 30 147 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
125 0.83 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 175 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =25 Vdc, VGS = 10Vdc, PEAK IL =42 Apk, L =0.454H, RG = 25) |
EAS |
400 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
1.2 62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET, Designer's and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
MTP50N06V Features
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET
MTP50N06VL Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DrainSource Voltage |
VGSS |
60 |
Vdc |
| DrainGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
Vdc |
| GateSource Voltage - Continuous - NonRepetitive (tp10ms) |
VGS VGSM |
±15 ±20 |
|
| Drain - Continuous @ 25°C - Continuous @ 100°C - Single Pulse(tp10 s) |
ID ID IDM |
42 30 147 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
125 0.83 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ,Tstg |
55 to 175 |
°C |
| Single DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5 Vdc, PEAK IL = 42 Apk, L = 0.3 mH, RG = 25) |
EAS |
265 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
1.2 62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds |
TL |
260 |
°C |
MTP50N06VL Features
New Features of TMOS V
• Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
• Faster Switching than EFET Predecessors
Features Common to TMOS V and TMOS EFETS
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET
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