MTP52N06VL2, MTP55N06, MTP55N06V Selling Leads, Datasheet
MFG:MOTOROLA Package Cooled:09+ D/C:09+
MTP52N06VL2, MTP55N06, MTP55N06V Datasheet download
Part Number: MTP52N06VL2
MFG: MOTOROLA
Package Cooled: 09+
D/C: 09+
MTP52N06VL2, MTP55N06, MTP55N06V
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Info of MTP52N06VL2
Info of MTP55N06
Info of MTP55N06V
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About MTP 3-Phase Rectifier Series
PDF/DataSheet Download
Datasheet: MTP 3-Phase Rectifier Series
File Size: 124897 KB
Manufacturer:
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About MTP55N06
PDF/DataSheet Download
Datasheet: MTP55N06
File Size: 146680 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MTP 3-Phase Rectifier Series
PDF/DataSheet Download
Datasheet: MTP 3-Phase Rectifier Series
File Size: 124897 KB
Manufacturer:
Download : Click here to Download
MTP55N06 General Description
This advanced high voltage TMOS EFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
MTP55N06 Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
60 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
±20 ± 40 |
Vdc Vpk |
| Drain Current - Continuous @TC= 25°C - Continuous @ TC=100°C - Single Pulse (tp 10 s) |
ID ID IDM |
55 35.5 165 |
Adc Apk |
| Total Power Dissipation@TC= 25°C Derate above 25°C |
PD |
113 0.91 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 175 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =25 Vdc, VDS =60Vdc,VGS = 10Vdc, PEAK IL =55Apk, L = 0.3mH, RG = 25) |
EAS |
454 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
1.1 62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
EFET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
MTP55N06 Features
• Avalanche Energy Capability Specified at Elevated Temperature
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient SuppressorAbsorbs High Energy in the Avalanche Mode
• ESD Protected. Designed to Typically Withstand 400 V Machine Model and 4000 V Human Body Model.
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient SuppressorAbsorbs High Energy in the Avalanche Mode
• ESD Protected. Designed to Typically Withstand 400 V Machine Model and 4000 V Human Body Model.
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